論文
公開件数:213件
No. 種別 査読の有無 標題 単著・共著区分 著者 誌名 巻号頁 出版日 ISSN DOI URL
1 一般論文

CdS nanowires formed by chemical synthesis using conjugated single-stranded DNA molecules
共著
S. N. Sarangi⁠⁠, S. N. Sahu⁠ and S. Nozaki⁠
Physica E: Low-dimensional Systems and Nanostructures
97/ -, 64-68
2018

10.1016/j.physe.2017.10.010

2 一般論文

Electron beam irradiation effect on the mechanical properties of nanosilica-filled polyurethane films
共著
Fei Dong, Suraj Maganty, Stephan J. Meschter, Shinji Nozaki, Takeshi Ohshima,Takahiro Makino, Junghyun Cho
Polymer Degradation and Stability
141/ -, 45-53
2017/05/04

10.1016/j.polymdegradstab.2017.05.003

3 一般論文

Development of laser lift-off process with a GaN/Al0.7Ga0.3N strained-layer superlattice for vertical UVC LED fabrication
共著
David Doan, Shinji Nozaki, Kazuo Uchida
International Journal of Engineering and Applied Sciences
4/ 4, 51-56
2017/04/01



4 一般論文

Growth mechanism of single-crystalline NiO thin films grown by metalorganic chemical vapor deposition
共著
Teuku Muhammad Roffi, Shinji Nozaki, and Kazuo Uchida
Journal of Crystal Growth
451/ -, 57-64
2016/06/27

10.1016/j.jcrysgro.2016.06.047

5 一般論文

InGaP/GaAs heterojunction photosensor powered by an on-chip GaAs solar cell for energy harvesting
共著
Phuc Hong Than, Kazuo Uchida, Takahiro Makino, Takeshi Ohshima, and Shinji Nozaki
Japanese Journal of Applied Physics
55/ -, 04ES09-1-04ES09-6
2016/03/16

10.7567/JJAP.55.04ES09

6 一般論文

Structural, electrical and optical properties of CoxNi1-xO films grown by metalorganic chemical vapor deposition
共著
Teuku Muhammad Roffi, Kazuo Uchida and Shinji Nozaki
Journal of Crystal Growth
414/ -, 123-129
2015

10.1016/j-jcrysgro.2014.10.027

7 一般論文

Effects of electrical stress on the InGaP/GaAs heterojunction phototransistors
共著
Phuc Hong Than, Kazuo Uchida, and Shinji Nozaki
IEEE Transactions on Device and Materials Reliability
15/ 4, 1-6
2015/12

10.1109/TDMR.2015.2491338

8 一般論文

Spectroscopic ellipsometry study of the free-carrier and band-edge absorption in ZnO thin films: Effect of non-stoichiometry

Chaman Singh, Shinji Nozaki, and Shyama Rath
Journal of Applied Physics
118, 195305-1-195305-9
2015/11/19

10.1063/1.4935629

9 一般論文

Low temperature formation of high-quality gate oxide by ultraviolet irradiation on spin-on-glass

R. Usuda, K. Uchida, and S. Nozaki
Applied Physics Letters
107/ -, 182903-1-182903-4
2015/11/03

10.1063/1.4935208

10 一般論文

Visible-blind ultraviolet photodiode fabricated by UV oxidation of metallic zinc on p-Si
共著
Dongyuan Zhang, Kazuo Uchida, and Shinji Nozaki
Journal of Applied Physics
118/ -, 094502-1-094502-8
2015/09/03

10.1063/1.4929961

11 一般論文

Raman modes, dipole moment and chirality in periodically positioned Au8 clusters
共著
A. Pradhani, O. Halder, S. Nozaki and S. Rath
RSC (Royal Society of Chemistry) Advances
5/ -, 65208-65213
2015/07/24

10.1039/c5ra09646d

12 一般論文

ZnO Nanorod-Based Non-Enzymatic Optical Glucose Biosensor
共著
Sachindra Nath Sarangi, Shinji Nozaki, and Surendra Nath Sahu
Journal of Biomedical Nanotechnology
11/ 6, 988-996
2015/06

org/10.1166/jbn.2015.2048

13 一般論文

High-quality gate oxide formed at 150 oC for flexible electronics
共著
Yasuhiro Iijima, Ryo Usuda, Kazuo Uchida, and Shinji Nozaki
Japanese Journal of Applied Physics
53/ -, 08LC05-1-08LC05-5
2014/07/23

10.7567/JJAP.53.08LC05

14 一般論文

NiO/Si heterostructures formed by UV oxidation of nickel deposited on Si substrates
共著
Dongyuan Zhang, Shinji Nozaki and Kazuo Uchida
J. Vac. Sci. Technol. B
32/ 3, 0131202-1-0131202-6
2014/03

10.1116/1.4868634

15 一般論文

Hydrothermal growth of zinc oxide nanorods and glucose-sensor application

Shinji Nozaki, Sachindra N. Sarangi, Kazuo Uchida, and Surendra Sahu
Soft Nanoscience Letters
3/ -, 23-26
2013/12



16 一般論文

InGaP/GaAsヘテロ接合フォトトランジスタの温度特性

Phuc Hong THAN、高木保志、内田和男、野崎眞次
電子情報通信学会論文誌 C
J96-C/ 9, 238-244
2013/09



17 一般論文

Characterization of order/disordered GaInP/GaAs heterointerface by the quantum hall effect

Kazuo Uchida, Kiwamu Satoh, Keita Asano, Atsushi Koizumi, and Shinji Nozaki
Journal of Crystal Growth
370/ -, 136 - 140
2013/04



18 一般論文

Highly p-typed superlattices consist of undoped InAs and carbon-doped GaAs layers

Kazuo Uchida, Heisuke Kanaya, Hiroshi Imanishi, Atsushi Koizumi, and Shinji Nozaki
Journal of Crystal Growth
370/ -, 197 - 199
2013/04



19 一般論文

E1/E2 traps in 6H-SiC studied with Laplace deep level transient spectroscopy

A. Koizumi, V. P. Markevich, N. Iwamoto, S. Sasaki, T. Ohshima, K. Kojima, T. Kimoto, K. Uchida, S. Nozaki, B. Hamilton, and A. R. Peaker
Applied Physics Letters
102/ 3, 032104-1 – 032104-4-
2013/01



20 一般論文

High-quality single crystalline NiO with twin phases grown on sapphire substrate by metalorganic vapor phase epitaxy

Kazuo Uchida, Ken-ichi Yoshida, Dongyuan Zhang, Atsushi Koizumi and Shinji Nozaki,
AIP ADVANCES
2, 042154-1 – 042154-5-
2012/11



21 一般論文

Microstructure developments of F-doped SiO2 thin films prepared by liquid phase deposition

Shijun Yu, Jae Sung Lee, Shinji Nozaki, Junghyun Cho
This Solid Films
520/ -, 1718-1723
2012/01



22 一般論文

Single-alpha-particle-induced charge transient spectroscopy of the 6H-SiC p+n diode irradiated with high-energy electrons

N. Iwamoto, A. Koizumi, S. Onoda, T. Makino, T. Ohshima, K. Kojima, S. Koike, K. Uchida, and S. Nozaki
IEEE Transactions on Nuclear Science
58/ 6, 3328-3332
2011/12



23 一般論文

Transient analysis of an extended drift region in a 6H-SiC diode formed by a single alpha particle strike and its contribution to the increased charge collection

N. Iwamoto, S. Onoda, T. Makino, T. Ohshima, K. Kojima, A. Koizumi, K. Uchida, and S. Nozaki
IEEE Transactions on Nuclear Science
58/ 1, 305 - 313
2011/02



24 一般論文

In situ CBrCl_3_ etching to control size and density of InAs/GaAs quantum dots

Atsushi Koizumi, Hiroshi Imanishi, Kazuo Uchida and Shinji Nozaki
Journal of Crystal Growth
315/ 1, 106 – 109-
2011/01



25 一般論文

Charge enhancement effects in 6H-SiC MOSFETs induced by heavy ion strike

Shinobu Onoda, Takahiro Makino, Naoya Iwamoto, Gyorgy Vizkelethy, Kazutoshi Kojima, Shinji Nozaki, and Takeshi Ohshima
IEEE Transactions on Nuclear Science
57/ 6, 3373-3379
2010/12



26 一般論文

Aqueous-based synthesis of atomic gold clusters: Geometry and optical properties

S. Rath, S. Nozaki, D. Palagin, V. Matulis, O. Ivashkevich, and S. Maki
Applied Physics Letters
97, 05310 -1 – 053103-3-
2010/08



27 一般論文

DNA template driven CdSe nanowires and nanoparticles: Structure and optical properties

S. N. Sarangi, S. Rath, K. Goswami, S. Nozaki and S. N. Sahu
Physica E
42, 1670 – 1674-
2010/01



28 一般論文

High-quality oxide formed by evaporation of SiO nanopowder: Application to MOSFET’s on plastic substrates and GaN epilayers

S. Nozaki, S. Kimura, A. Koizumi, H. Ono and K. Uchida
Materials Science in Semiconductor Processing
11, 384 – 389-
2009



29 一般論文

Detection of low-density Ge nanoparticles using surface-enhanced Raman spectroscopy

Shyama Rath, Somaditya Sen, Shinji Nozaki, Masahide Tona, Shunsuke Ohtani, and K. P. Jain
Advanced Science Letters
2/ 3, 377 – 380-
2009



30 一般論文

Enhancement of the visible luminescence from the ZnO nanocrystals by Li and Al co-doping

J. Nayak, S. Kimura and S. Nozaki
J. Luminescence
129/ 1, 12-16
2009



31 一般論文

Characterization of MOVPE-grown p-InGaAs/n-InP interfaces

Kazuo Uchida, Hidenori Yamato, Yoshikuni Tomioka, Atsushi Koizumi and Shinji Nozaki
Journal of Crystal Growth
311, 4011 – 4015-
2009/07



32 一般論文

CdS-ZnO composite nanorods: Synthesis, characterization and application for photocatalytic degradation of 3,4-dihydroxy benzoic acid

J. Nayak, S. N. Sahu, J. Kasuya, and S. Nozaki
Appl. Surface Science
254/ 22, 7215 – 7218-
2008



33 一般論文

Effect of substrate on the structure and opticl properties of ZnO nanorods

J. Nayak, S. N. Sahu, J. Kasuya, and S. Nozaki
J. Phys. D: Appl. Phys.
41, 115303 -1 – 6
2008



34 一般論文

Persistent photoconductivity in ZnO nanorods deposited on electro-deposited seed layers of ZnO

J. Nayak, J. Kasuya, A. Watanabe, and S. Nozaki
J. Phys. Condensed Matter
20, 195222-1 – 5
2008



35 一般論文

Thermal and ion induced annealing of nanocrystalline ZnO thin film deposited by atom beam sputtering

D. C. Agarwal, F. Singh, D. Kabiraj, S. Sen, P. K. Kulariya, I. Sulania, S. Nozaki, R. S. Chauhan and D. K. Avasthi
J. Phys. D: Appl. Phys.
41/ 4, 045305 – 045310-
2008



36 一般論文

Yellowish-white photoluminescence from ZnO nanoparticles doped with Al and Li

J. Nayak, S. Kimura, S. Nozaki, H. Ono, and K. Uchida
Superlattices and Microstructures
42, 438 – 443-
2007



37 一般論文

Correlation between the base-emitter interface crystallinity quality and the current gain in InGaP/GaAs HBTs grown by MOVPE

Kazuo Uchida, Airi Kurokawam Fu-Ying Yang, Zhi Jin, Shinji Nozaki, and Hiroshi Morisaki
J. Crystal Growth
298, 861 – 866-
2007



38 一般論文

Electron energy levels in ZnSe quantum dots

V. V. Nikesh, Amit D. Lad, Seiji Kimura, Shinji Nozaki, and Shailaja Mahamuni
J. Appl. Phys.
100/ 11, 113520-1 – 113520-6-
2006



39 一般論文

Selective formation of size-controlled silicon nanocrystals by photosynthesis in SiO nanoparticle thin film

Changyong Chen, Seiji Kimura, Shinji Nozaki, Hiroshi Ono, and Kazuo Uchida
IEEE Transactions on Nanotechnology
5/ 6, 671-676
2006



40 一般論文

GaAs nanocrystals: Structure and vibrational properties

J. Nayak, S. N. Sahu and S.Nozaki
Applied Surface Science
252, 2867 – 2874-
2006



41 一般論文

DNA template-driven synthesis of HgTe nanoparticles

S. Rath, G.B.N. Chainy, S. Nozaki, and S. N. Sahu
Physica E
30, 182 – 185-
2005



42 一般論文

エレクトロニクス素子と集積の総合理解を目指す教育ー研究・教育活性化支援システム教育プロジェクトー(共著)

野崎眞次、範 公可
電気通信大学紀要
17/ 1,2, 119 -127
2005/01



43 一般論文

Fabrication of nanostructured palladium-doped SiO2 films with variable temperature coefficient of resistivity

Takahisa Ichinohe, Susumu Masaki, Kazuo Uchida, Shinji Nozaki, and Hiroshi Morisaki
Thin Solid Films
466, 27 – 33-
2004



44 一般論文

Quantum confinement effect in HgTe nanocrystals and visible luminescence(共著)

S. Rath, A. K. Dash, S. N. Sahu and S. Nozaki
International Journal of Nanoscience
3/ 3, 393 – 401-
2004



45 一般論文

Growth and characterization of p-type InGaAs on InP substrates by LP-MOCVD using a new carbon-dopant source, CBrCl3(共著)

K. Uchida, K. Takahashi, S. Kabe, S. Nozaki and H. Morisaki
J. Crystal Growth
272, 658 – 663-
2004



46 一般論文

Optical nonlineality of monodispersed, capped ZnS quantum particles(共著)

V. V. Nikesh, A. Dharmadhikari, H. Ono, S. Nozaki, G. R. Kumar, and S. Mahamuni
Appl. Phys. Lett.
84/ 23, 4602 – 4604-
2004



47 一般論文

SiOx超微粒子の蒸着による低温シリコン酸化膜の作製(共著)

木村 誠二、野崎 眞次、内田 和男、小野 洋、森崎 弘、川崎 卓
電気通信大学共同研究成果発表会
11-12
2004/06



48 一般論文

Metal organic vapor phase epitaxial growth of heavily carbon-doped GaAs using a dopant source of CCl3 and quantitative analysis of the compensation mechanism in the epilayers(共著)

S. Bhunia, K. Uchida, S. Nozaki, N. Sugiyama, M. Furiya, and H. Morisaki
J. Appl. Phys.
93/ 3, 1613 – 1619-
2003



49 一般論文

Real-time measurement of rocking curves during MOVPE growth of GaxIn1-xP/GaAs(共著)

S. Bhunia, T. Kawamura, Y. Watanabe, S. Fujikawa, J. Matsui, Y. Kagoshima, Y. Tsusaka, K. Uchida, S. Nozaki, and H. Morisaki
Appl. Surface Science
216, 382-387
2003



50 一般論文

Metal organic vapor phase epitaxial growth of heavily carbon-doped GaAs using a dopant source of CCl3 and quantitative analysis of the compensation mechanism in the epilayers(共著)

S. Bhunia, K. Uchida, S. Nozaki, N. Sugiyama, M. Furiya, and H. Morisaki
J. Appl. Phys.
93/ 3, 1613-1619
2003



51 一般論文

Heavily carbon doping of GaAs by MOVPE using a newdopant source CBrCl3 and characterization of the epilayers(共著)

K. Uchida, S. Bhunia, N. Sugiyama, M. Furiya, M. Katoh, S. Katoh, S. Nozaki, and H. Morisaki
J. Crystal Growth
248, 124-129
2003



52 一般論文

Electron transport in Ge nanocrystalline films deposited using the cluster beam evaporation technique(共著)

S. Banerjee, S. Nozaki, and H. Morisaki
J. Appl. Phys.
91/ 7, 4307-4311
2002



53 一般論文

A photo-oxidation generated low-k dielectric film deposited by reactive evaporation of SiO(共著)

J. J. Si, Y. Show, S. Banerjee, H. Ono, K. Uchida, Shinji Nozaki, H. Morisaki
Microelectronic Engineering (Elsevier Science)
60, 313-321
2002



54 一般論文

超音速ジェットノズルによるシリコン超微粒子浮遊ゲートMOSキャパシターの作製(共著)

野村政人、野崎真次、小野 洋、内田和男、森崎 弘
応用物理学会分科会シリコンテクノロジーNo.46「量子サイズシリコン系素子−新機能と応用—」特集号
46, 39-42
2002/11



55 一般論文

ダブルヘテロGaAs/GaInP HBTのDC特性変化(共著)

降矢美保、高橋一真、浜 俊彦、小野 洋、内田和男、野崎真次、森崎 弘、本城和彦
第63回応用物理学会学術講演会予稿集
25p-YD-8, 288-
2002/09



56 一般論文

Oxidation study on Ge quantum dots(共著)

Y. S. Lim, I. Berbezier, A. Portavoce, S. Nozaki, F. Bassani, and A. Ronda
European Materials Research Society 2002 Spring Meeting

2002/06



57 一般論文

Si超微粒子熱酸化によるナノポーラスシリカ膜の作製(共著)

安富大祐、木原尚志、小野 洋、内田和男、野崎真次、森崎 弘、吉丸正樹
電気通信大学共同研究センター第7回共同研究成果発表会

2002/05



58 一般論文

Study on pressure working time and releasing rate for phase transformation of Ge(共著)

M. Oh-ishi, S. Akiyama, K. Uchida, S. Nozaki, and H. Morisaki
Phys. Stat. Sol.(b)
223, 391-395
2001



59 一般論文

Wurtzite silicon nanocrystals deposited by the cluster-beam evaporation technique(共著)

J. Y. Zhang, H. Ono, K. Uchida, S. Nozaki, and H. Morisaki
Phys. Stat. Sol.(b)
223, 41-45
2001



60 一般論文

"固相Siナノクラスターによる半導体メモリー"(共著)

野崎真次、佐倉 竜太、Puspashree Mishra、内田和男、森崎 弘
ナノ・インテリジェント材料シンポジウム、未踏科学技術協会・インテリジェント材料フォーラム主催、平成13年11月13日、東京青学会館 (招待講演)

2001/11



61 一般論文

"Correlation between the dielectric constant and porosity of nanoporoous silica thin films deposited by the gas evaporation technique"(共著)

J. J. Si, H. Ono, K. Uchida, S. Nozaki, H. Morisaki, and N. Ito
Appl. Phys. Lett.
79/ 19, 3140-
2001/11



62 一般論文

Compression of the dc drain current by electron trapping in AlGaN/GaN modulation doped field-effect transistors(共著)

S. Nozaki, H. Feick, E. R. Weber, M. Micovic, and C. Nguyen,
Appl. Phys. Lett.
78/ 19, 2896 - 2898
2001/05



63 一般論文

Analysis of twin defects in GaAs(III)B molecular beam epitaxy growth(共著)

Y. Park, M. Cich, R. Zhao, P. Specht, E. R. Weber, E. Stach, and S. Nozaki
Journal of Vacuum Science and Technology B
18/ 3, 1566-1571
2000/05



64 一般論文

SiドープSiO2薄膜の欠陥構造(共著)

佐藤慶介,岩瀬満雄,和泉富雄,野崎眞次,森崎 弘
東海大学紀要工学部
1999年/ 2
1999



65 一般論文

Correlation between defect structures and light emission in Si-nanocrystal cloped SiO2 films(共著)

K. Sato, Y. Sugiyama, T. Izumi, M. Iwase, Y. Show, S. Nozaki and H. Morisaki
Materials Research Society Symposium Proceeclings
536, 57-61
1999



66 一般論文

Plasmon loss features of germanium nanocrystals fabricated by the cluster-beam evaporation technique(共著)

S. Sato, S. Nozaki, and H. Morisaki
Thin Solid Films
343-344, 481-483
1999



67 一般論文

Study of growth process of germanicem nanocrystals using a grazing incidence x-ray diffraction method(共著)

H. Ninomiya, N. Ito, S. Rath, S. Nozaki, and H. Morisaki
Journal of Vacwm Science and Technology B
17/ 5, 1903-1905
1999/10



68 一般論文

Study of growth process of germanicem nanocrystals using a grazing incidence x-ray diffraction method(共著)

H. Ninomiya, N. Ito, S. Rath, S. Nozaki, and H. Morisaki
Journal of Vacwm Science and Technology B
17/ 5, 1903-1905
1999/09



69 一般論文

Volume plasmons in porous silicon(共著)

S. Sato, S. Rath, S. Akiyama, S. Nozaki, and H. Morisaki
Journal of Applied Physics
86/ 3, 1774-1776
1999/08



70 一般論文

Coulomb-blockade effect observed at room temperature in Ge nanocrystalline films deposited by the cluster-beam evaporation technique(共著)

Souri Banerjee, S. Nozaki and H. Morisaki
Applied Physics Letters
76/ 4, 445-447
1999/01



71 一般論文

Eviclence of a tetragonal structure of germanium nanocrystals prepared by the cluster-beam deposition technique(共著)

Shyama Rath, S. Sato, H. Ono, S. Nozaki, and H. morisaki
Mate rials Chemistry and Physics
54, 244-246
1998



72 一般論文

Oxidation characteristics of Genanocrystals embedded in an SiO2 matrix(共著)

Shyama Rath, H. Ono, S. Nozaki, and H. morisaki
J. Surface Analysis
4/ 2, 251-254
1998



73 一般論文

Germanium nanostructures deposited by the clusterbeam evaporation technique(共著)

S. Nozaki, S. Sato, H. Ono, and H. Morisaki
J. Surface Analysis
4/ 2, 181-184
1998



74 一般論文

Density of states of the tetragonal-phase germanium nanocrystals using X-ray photoelectron spectroscopy(共著)

S. Sato, S. Nozaki, and H. Morisaki
Applied Physics Letters
72/ 19, 2460-2462
1998/05



75 一般論文

Chracterization of diamond films for photoelectrolysis electrode(共著)

H. Ono, T. Sone, K. Moriya, S. Nozaki, H. Morisaki, S. Yugo
Diamond Films and Technology
7/ 5-6, 362-364
1997



76 一般論文

The structure and optical properties of silicon ultrafine particles deposited by the gas-evaporation technique with a supersonic jet nozzle(共著)

H. Ono, S. Nozaki, H. Morisaki
Nanostructured Materials
9/ 1-8, 567-570
1997



77 一般論文

Hydrogenated carbon nitride thin films deposited by the plasma chemical vapor deposition technique using trimethylamine and ammonia(共著)

S. Kobayashi, S. Nozaki, H. Morisaki, S. Masaki
Japanese Journal of Applied Physics
36/ 8, 5187-5191
1997/08



78 一般論文

Photo-oxidation of germanium nanostructures deposited by the Cluster-beam evaporation technique(共著)

S. Sato, S. Nozaki, H. Morisaki
Journal of Applied Physics
81/ 3, 1518-1521
1997/02



79 一般論文

Visible light emission from the porous alloyed Pt/Si contacts(共著)

T. Ichinohe, S. Nozaki, H. Morisaki
Thin Solid Films
281-282, 610-612
1996



80 一般論文

Carbon nitride thin films deposited by the reactive ion beam sputtering technique(共著)

S. Kobayashi, S. Nozaki, H. Morisaki, S. Fukui, S. Masaki
Thin Solid Films
281-282, 289-293
1996



81 一般論文

Correlation between light emission and dangling bonds in porous silicon(共著)

M. Shimasaki, Y. Show, M. Iwase, T. Izumi, T. Ichinohe, S. Nozaki, H. Morisaki
Applied Surace Science
92, 617-620
1996



82 一般論文

Raman spectroscopy of germanium films deposited with cluster-beam technique(共著)

M. Wakaki, M, Iwase, Y. Show, K. Koyama, S. Sato, S. Nozaki, H. Morisaki
Physica B
219/220, 535-537
1996



83 一般論文

MBE法による歪InGaAs/GaAs上へのInAs成長

脇 英司、山口浩一、野崎真次
第57回応用物理学会学術講演会講演予稿集
7aZH8, 170-
1996/09



84 一般論文

Nitrogen-ion irradiation during the deposition of C1-xNx thin films by ion beam sputtering technique(共著)

S. Kobayashi, K. Miyazaki, S. Nozaki, H. Morisaki, S. Fukui, S. Masaki
Journal of Vacuum Science and Technology A
14/ 3, 777-780
1996/06



85 一般論文

Nitrogen-ion irradiation during the deposition of C1-xNx thin films by ion beam sputtering technique(共著)

S. Kobayashi, K. Miyazaki, S. Nozaki, H. Morisaki, S. Fukui, S. Masaki
Journal of Vacuum Science and Technology A
14/ 3, 777-780
1996/05



86 一般論文

PhotoIuminescence study on oxygen-containing silicon nanostructures(共著)

S. Sato, H. Ono, S. Nozaki, H. Morisaki
Nanostructured Materials
5/ 5, 589-598
1995



87 一般論文

Electroluminescence from carbon-doped GaAs junctions with semi-insulating GaAS(共著)

S. X. Tian, D. Haneman, S. Nozaki, K. Takahashi
Applied Physics Letters
66/ 10, 1246-1248
1995



88 一般論文

Visible Light Emission from Silicon Doped SiO2 Thin Film Deposited by Sputtering(共著)

Shinji Nozaki, H. Nakamura, H. Ono, H. Morisaki, N. Ito
Japenese Journal of Applied Physics supplement
34/ suppl34-1, 122-124
1995



89 一般論文

Over-relaxation of misfit strain in heauily carbondoped GoAs grown by metalorganic molecular beam epitaxy after annealing(共著)

H. Sohn, E. R. Weber, S. Nozaki, K. Takahashi
Applied Physics Letters
67/ 8, 1104-1106
1995/08



90 一般論文

Tetragonal germanium films deposited by the cluster-beam evaporation technique(共著)

S. Sato, S. Nozaki, H. Morisaki
Applied physics Letters
66/ 23, 3176-3178
1995/06



91 一般論文

Intelligent materials in future electronics(共著)

K. Takahashi, S. Nozaki
IEEE Transactions on Components,Packaging, and Manufacturing Technology-Part A
18/ 2, 245-248
1995/06



92 一般論文

Ambient Scanning Tunneling Microscopy and Atomic Force Microscopy on GaAs (110) Treated with (NH4)2Sx and SeS2 Solutions(共著)

Shinji Nozaki, S. Tamura, K. Takahashi
Journal of Vacuum Science & Technology B
13/ 2, 297-304
1995/03



93 一般論文

Cyclic Shifts in the Photoluminescence Spectra of the Porous Si in HF(共著)

T. Ichinohe, S. Nozaki, H. Ono, H. Morisaki
Applied Physics Letters
66/ 13, 1644-1646
1995/03



94 一般論文

From Intelligent Sensors to Fuzzy Sensors(共著)

K. Takahashi, Shinji Nozaki
Sensors and Actuators A
40, 89-91
1994



95 一般論文

Design of Future Electron Devices with Intelligent Materials (共著)

Shinji Nozaki, K. Takahashi
J, Intelligent Material Systems and Structures
5, 136-140
1994/01



96 一般論文

クラスターによる人工原子の創製(共著)

野崎真次、森崎 弘、高橋 清
インテリジェント材料
3/ 2, 10-15
1993



97 一般論文

Effects of Anodization Temperature on Photolumimescence From Porous Silicon (共著)

H. Ono, H. Gomyo, H. Morisaki, S. Nozaki, Y. Show, M. Shimasaki, T. Izumi
J. Electrochemical Society
140/ 12, L180-L182
1993/12



98 一般論文

Study on Thermal Stability of Carbon-Doped GaAs Using Novel Metalorganic Molecular Beam Epitaxial Structures (共著)

Shinji Nozaki, K. Takahashi, M. Shirahama, K. Nagao, J. Shirakashi, E. Tokumitsu, M. Konagai
Applied Physics Letters
62/ 16, 1913-1915
1993/04



99 一般論文

Heavily carbon-doped p-type InGaAs by MOMBE(共著)

E. Tokumitsu, J. Shirakashi, M. Qi, T. Yamada, Shinji Nozaki, M. Konagai, K. Takahashi
J. Crystal Growth
120, 301-
1992



100 一般論文

Modeling of silicon diffusion in GaAs using well defined silicon doped molecular beam epitaxy structures(共著)

J. J. Murray, M. D. Deal, E. L. Allen, D. A. Stevenson, Shinji Nozaki
J. Electrocjemical Society
139/ 7, 2037-
1992/07



101 一般論文

MOMBE Growth and Characterization of Heavily Carbon-Doped InGaAs (共著)

T. Yamada, Shinji Nozaki, R. Miyake, T. Fukamachi, J. Shirakashi, M. Konagai, K. Takahashi
J. Crystal Growth
111, 584-
1991



102 一般論文

GaAs Pseudo-Heterojunction Bipolal Transistor with a Heavily Carbon-Doped Base (共著)

Shinji Nozaki, K. Saito, J. Shirakashi, M. Qi, T. Yamada, E. Tokumitsu, M. Konagai, K. Takahashi, K. Matsumoto
Japanese J. Applied Physics
30/ 12B, 3840-
1991/12



103 一般論文

P-type carbon-doped InGaAs grown by metalorganic molecular beam epitaxy(共著)

J. Shirakashi, T. Yamada, M. Qi, Shinji Nozaki, K. Takahashi, E. Tokumitsu, M. Konagai
Japanese J. Applied Physics
30/ 9B, L1609-
1991/09



104 一般論文

Critical Thickness Anisotropy in Heavily Carbon-Doped P-Type(100)GaAs Layers Grown by Metalorganic Molecular Beam Epitaxy (共著)

T. George, E. R. Weber, Shinji Nozaki, T. Yamada, M. Konagai, K. Takahashi
Applied Physics Letters
59/ 1, 60-
1991/07



105 一般論文

Improved characteeristics of GaAs ,etal-semiconductor field-effect transistors on Si substrates back-coated with SiO2 by metalorbanic chemical vapor deposition(共著)

T. Egawa, Shinji Nozaki, T. Soga, T. Jimbo, M. Umeno
Applied Physics Letters
58/ 12, 1265-
1991/03



106 一般論文

Improvement of GaAs metal-semiconductor field-effect transistors characteristics on SiO2 back-coated Si substrate by metalorganic chemical vapor deposition(共著)

T. Egawa, Shinji Nozaki, T. Soga, T. Jimbo, M. Umeno
Japanese J. Applied Physics
29/ 12, L2417-
1990/12



107 一般論文

Metalorganic Chemical Vapor Deposition Growth of Undoped GaAs with a Low Electron Concentration on Si Substrate (共著)

Shinji Nozaki, A. T. Wu, J. J. Murray, T. George, T. Egawa, M. Umeno
Applied Physics Letters
57/ 25, 2669-
1990/12



108 一般論文

Transmission Electron Microscopy Investigation of Dislocation Bending by GaAsP/GaAs Strained Layer Superlattice on Heteroepitaxial GaAs/Si (共著)

J. S. Whelan, T. George, E. R. Weber, Shinji Nozaki, A. T. Wu, M. Umeno
J. Applied Physics
68/ 10, 5115-
1990/11



109 一般論文

GaAs PN Diodes with Heavily Carbon-Doped P-Type GaAs Grown on GaAs Substrate by MOMBE (共著)

Shinji Nozaki, R. Miyake, T. Yamada, M. Konagai, K. Takahashi
Japanese J. Applied Physics
29/ 10, L1731-
1990/10



110 一般論文

Crystallinity and Schottky diode characteristics of GaAs grown on Si by metalorganic chemical vapor deposition(共著)

T. Egawa, Shinji Nozaki, N. Noto, T. Soga, T. Jimbo, M. Umeno
J. Applied Physics
67/ 11, 6908-
1990/06



111 一般論文

Heavily carbon-doped InGaAs grown by metalorganic molecular beam epitaxy(共著)

T. Akatsuka, R. Miyake, Shinji Nozaki, T. Yamada, M. Konagai, K. Takahashi
Japanese J. Applied Physics
29/ 4, L537-
1990/04



112 一般論文

Nucleation and defect generation in lattice matched and mismatched heteroepitaxial layers in the GaAs/AlxGa1-xP/Si system(共著)

T. George, E. R. Weber, Shinji Nozaki, A. T. Wu, N. Noto, M. Umeno
J. Applied Physics
67/ 5, 2441-
1990/03



113 一般論文

Effects of Growth Temperature and V/III Ration on MOCVD-Grown GaAs-on-Si (共著)

Shinji Nozaki, N. Noto, T. Egawa, A. T. Wu, T. Soga, T. Jimbo, M. Umeno
Japanese Journal of Applied Physics
29/ 1, 138-
1990/01



114 一般論文

Defect characterization of GaAs on Si Grown by MOCVD(共著)

T. Soga, Shinji Nozaki, N. Noto, H. Nishikawa, T. Jimbo, M. Umeno
Japanese Journal of Applied Physics
28/ 12, 2441-
1989/12



115 一般論文

Evidence of a gas phase transport mechanism for Si incorporation in the metalorganic chemical vapor deposition of GaAs(共著)

T. George, E. R. Weber, Shinji Nozaki, J. J. Murray, A. T. Wu, M. Umeno
Applied Physics Letters
55/ 20, 2090-
1989/11



116 一般論文

New Mechanism for Si Incorporation in GaAs-on-Si Heteroepitaxial Layers Grown by Metalorganic Chemical Vapor Deposition (共著)

Shinji Nozaki, J. J. Murray, A. T. Wu, T. George, E. R. Weber, M. Umeno
Applied Physics Letters
55/ 16, 1674-
1989/10



117 一般論文

Si上へのGaAsの結晶成長とそのヘテロ接合特性

曽我哲夫、江川孝志、野崎真次、能登宣彦、神保孝志、梅野正義
電子情報通信学会研究会資料(SDM88-140)
13-
1989/01



118 一般論文

Conduction and Charge Trapping in Polysilicon-Nitride-Oxide-Silicon Structures under Positive Gate Bias (共著)

Mehran Aminzadeh, Shinji Nozaki, R.V.Giridhar
IEEE Transactions on Electron Devices
35/ 4, 459-
1988/04



119 一般論文

Specific contact resistivity of indium contacts to n-type CdTe(共著)

Shinji Nozaki, A. G. Milnes
J. Electronic Materials
14, 147-
1985



120 一般論文

Numerical Modeling of Looped C-V Characteristics in a p+n Junction Containing Mid-Bandgap Electron Traps(共著)

Shinji Nozaki, Arthur G. Milnes
Solid State Electronics
26/ 2, 115-
1983



121 一般論文

Analysis of solar cell array performance with open-circuit defects(共著)

Shinji Nozaki, Arthur G. Milnes
Solar Cells
6, 375-
1982



122 招待論文

Selective growth of ZnO nanorods by the hydrothermal technique

Shinji Nozaki, Sachin N. Sarangi, Surendra N. Sahu and Kazuo Uchida
Advances Natural Sciences: Nanoscience and Nanotechnology
4, 015008 (4pp)-
2013/01



123 招待論文

High-quality oxide formed by evaporation of SiO nanopowder: Application to MOSFET’s on plastic substrates and GaN epilayers

S. Nozaki, S. Kimura, A. Koizumi, H. Ono and K. Uchida
Materials Science in Semiconductor Processing
11, 384- 389
2009



124 招待論文

Photoluminescence of Si nanocrystals formed by the photosynthesis

S. Nozaki, C. Y. Chen, S. Kimura, H. Ono, and K. Uchida
Thin Solid Films
517/ 1, 50-54
2008



125 招待論文

Photo-modification and synthesis of semiconductor nanocrystals

S. Nozaki, C. Y. Chen, H. Ono, and K. Uchida
Surface Science
601, 2549 -2554
2007



126 招待論文

Passivation of InP-based HBTs

Z. Jin, K. Uchida, S. Nozaki, W. Prost and F.-J. Tegude
Applied Surface Science
252, 7664 – 7670-
2006



127 招待論文

Light scattering spectroscopies of semiconductor nanocrystals (quantum dots)

Peter Y. Yu, Grant Gardner, Shinji Nozaki and Isabelle Berbezier
J. Phys.: Conference Series
28, 1 – 6-
2006



128 国際会議プロシーディングス等

ZnO-nanorods: a possible white LED phosphor

Sachindra Nath Sarangi, Arun T, Dinseh K. Ray, Pratap Kumar Sahoo, Shinji Nozaki, Noriyuki Sugiyama and Kazuo Uchida
AIP Conference Proceedings
1832/ 060022, 060022-1- 060022-3
2017/06/05

10.1063/1.4980427

129 国際会議プロシーディングス等

Effects of Electrical Stress and High-Energy Electron Irradiation on the InGaP/GaAs Heterojunction Phototransistor
共著
Phuc Hong Than, Kazuo Uchida, Takahiro Makino, Takeshi Ohshima and Shinji Nozaki
Mat. Res. Soc. Symp. Proc.
1792/ -, DOI:10.1557/opl.2015.403--
2015

10.1557/opl.2015.403

130 国際会議プロシーディングス等

Effect of O2/Ni ratio on structure and surface morphology of atmospheric pressure MOCVD grown NiO thin films

Teuku M. Roffi, Motohiko Nakamura, Kazuo Uchida and Shinji Nozaki
Mat. Res. Soc. Symp. Proc.
1577/ -, DOI: 10.1557/0pl.2013.651-
2013



131 国際会議プロシーディングス等

Fabrication of a p-NiO/n-Si heterojunction diode by UV oxidation of Ni deposited on n-Si

Dongyuan Zhang, Kazuo Uchida and Shinji Nozaki
Mat. Res. Soc. Symp. Proc.
1494/ -, DOI: 10.1557/0pl.2013.520-
2013



132 国際会議プロシーディングス等

Intense ultraviolet photoluminescence observed at room temperature from NiO nanoporous thin films grown by the hydrothermal technique,

Sachindra Nath Sarangi, Dongyuan Zhang, Kumar Sahoo, Kazuo Uchida Surendra Nath Sahu and Shinji Nozaki
Mat. Res. Soc. Symp. Proc.
1494/ -, DOI: 10.1557/0pl.2012.1699-
2013



133 国際会議プロシーディングス等

Effects of radiation-induced defects on the charge collection efficiency of a silicon carbide particle detector

Naoya Iwamoto, Shinobu Onoda, Takeshi Ohshima, Shinji Nozaki and Kazutoshi Kojima
Proceeding of SPIE
8725/ -, 87252G-1 – 87252G-8-
2013/07



134 国際会議プロシーディングス等

Peak degradation of heavily-ion induced transient currents in 6H-SiC MOS capacitors

T. Makino, N. Iwamoto, S. Onoda, T. Ohshima, K. Kojima and S. Nozaki
Materials Science Forum
717-720, 469-472
2012



135 国際会議プロシーディングス等

Defects in an electron-irradiated 6H-SiC diode studied by alpha particle induced charge transient spectroscopy: Their impact on the degraded charge collection efficiency

N. Iwamoto, A. Koizumi, S. Onoda, T. Makino, T. Ohshima, K. Kojima, S. Koike, K. Uchida and S. Nozaki
Materials Science Forum
717 - 720, 267 - 270
2012



136 国際会議プロシーディングス等

Refreshable decrease in peak height of ion beam induced transient current from silicon carbide metal-oxide-semiconductor capacitors

T. Ohshima, N. Iwamoto, S. Onoda, T. Makino, M. Deki and S. Nozaki
Proceedings of the 21nd International Conference on the Application of Accelerators in Research and Industry (AIP Conference Proceedings)
1336/ -, 660 – 664-
2011



137 国際会議プロシーディングス等

Oxygen ion induced charge in SiC MOS capacitors irradiated with gamma-rays

Takeshi Ohshima, Naoya Iwamoto, Shinobu Onoda, Takahiro Makino, Shinji Nozaki and Kazutoshi
Materials Science Forum
679 - 680, 362 - 365
2011



138 国際会議プロシーディングス等

Compensation-dependent carrier transport of Al-doped p-type 4H-SiC

Atsushi Koizumi, Naoya Iwamoto, Shinobu Onoda, Takeshi Ohshima, Tsunenobu Kimoto, Kazuo Uchida and Shinji Nozaki
Materials Science Forum
679 - 680, 201- 204
2011



139 国際会議プロシーディングス等

Improvement of high-power-white-LED lamp performance by liquid injection

T. M. Roffi, I. Idris, K. Uchida, S. Nozaki, N. Sugiyama, H. Morisaki, F. X. N. Soelami
Proceedings of the 2011 International Conference of Electrical Engineering and Informatics
IEEE Catalog Number/ CFP1177H-CDR, F2-4
2011/07



140 国際会議プロシーディングス等

Comparative study on reliability of InP/InGaAs heterojunction bipolar transistors with highly Zn- and C-doped base layers

Atsushi Koizumi, Kazuki Oshitanai, Jaesung Lee, Kazuo Uchida and Shinji Nozaki,
MRS Proceedings 2009
1195/ B06, 02-
2010



141 国際会議プロシーディングス等

Charge collection efficiency of 6H-SiC P+N diodes degraded by low-energy electron irradiation

N. Iwamoto, S. Onoda, T. Ohshima, K. Kojima, A. Koizumi, K. Uchida and S. Nozaki
Materials Science Forum
645 - 648, 921- 924
2010



142 国際会議プロシーディングス等

InGaP/GaAs heterointerfaces studied by cross-sectional scanning tunneling microscopy and their impact on the device characteristics

S. Nozaki, A. Koizumi, K. Uchida, and H. Ono
Proceedings of the International Conference Nanomeeting-2009: Physics, Chemistry and Application of Nanostructures
18 - 23
2009/05



143 国際会議プロシーディングス等

Growth and optical properties of SnO2 ultra-small nanorods by the novel micelle technique

S. Rath, S. Nozaki, H. Ono, K. Uchida and S. Khojima
Mat. Res. Soc. Symp. Proc.
1087, 1087-V03-29-
2008



144 国際会議プロシーディングス等

Mechanically strong ultralow-k nanoporous silica made of SiOx nanoparticles

Shinji Nozaki, Hiroshi Ono, and Kazuo Uchida
Proceedings of Advance Metallization Conference 2006
413 – 417-
2007



145 国際会議プロシーディングス等

Low-temperature formation of high-quality SiOx thin films by evaporation of SiO nanopowder

Shinji Nozaki, Seiji Kimura, Hiroshi Ono and Kazuo Uchida
Digest of Technical Papers
19 – 22-
2006



146 国際会議プロシーディングス等

Position and size-controlled photosynthesis of silicon nanocrystals in SiO2 films

C. Y. Chen, S. Kimura, S. Sen, S. Nozaki, H. Ono, K. Uchida, and H. Morisaki
Proceedings of NanoSingapore 2006: IEEE Conference on Emerging Technologies-Nanoelectronics
289 – 292-
2006/01



147 国際会議プロシーディングス等

Self-limiting photo-assisted synthesis of silicon nanocrystals

C. Y. Chen, S. Kimura, S.Sen, S. Nozaki, H. Ono, K. Uchida, and H. Morisaki
Mat. Res. Soc. Symp. Procs. 832
F10.21.1 – F10.21.6-
2005



148 国際会議プロシーディングス等

Material Issues in high-frequency GaInP/GaAs heterojunction bipolar transistors

Shinji Nozaki, Hiroshi Ono, Kazuo Uchida and Hiroshi Morisaki
Proceedings of the XIII International Workshop on Physics of Semiconductor Devices, vol. II
741 – 747-
2005/12



149 国際会議プロシーディングス等

Substrate Nanostructuration: Self-assembling and Nanoparticles

I. Berbezier, A. Pimpinelli, R. Hull and S. Nozaki
Superlattices and Microstructures(European Materials Research Society Symposia Proceedings)
36/ 1-3
2004



150 国際会議プロシーディングス等

EMRS 2002 Symposium S: Micro- and Nano-Structured Semiconductors

I.Berbezier, A. Nassiopoulou, and S. Nozaki
Materials Science and Engineering
B101/ 1-3
2003



151 国際会議プロシーディングス等

The effects of Sb on the oxidation of Ge quantum dots(共著)

Y. S. Lim, F. Bassani, A. Portavoce, A. Ronda, S. Nozaki, and I. Berbezier
Materials Science and Engineering
B101/ 1-3, 190-193
2003



152 国際会議プロシーディングス等

Capacitance-voltage hysteresis in the metal-oxide-semiconductor capacitor with Si nanocrystals deposited by the gas evaporation technique(共著)

P. Mishra, S. Nozaki, R. Sakura, H. Morisaki, H. Ono, and K. Uchida
Materials Research Symposium Proceedings
686, A.5.4.1-
2002



153 国際会議プロシーディングス等

Ultralow K nanoporous silica by oxidation of silicon nanocrystals(共著)

Shinji Nozaki, H. Ono, K. Uchida, H. Morisaki, N. Ito, M. Yoshimaru
2002 International Interconnect Technology Conference (IEEE)
69-
2002/06



154 国際会議プロシーディングス等

Effect of hydrogen treatment on high efficiency electroluminescence device using silicon nanocrystals(共著)

K. Sato, T. Izumi, M. Iwase, Y. Show, S. Nozaki and H. Morisaki
Mat. Res. Soc. Fall Meeting, Boston, USA, Nov. 27 - Dec. 1, 2000, Mat. Res. Soc. Symp. Proc.
638, F14.30.1 - F14.30.6
2001



155 国際会議プロシーディングス等

Oxidation of MBE-grown Ge dots on Si and application to nanocrystal memories: Controlled positioning of Ge dots in SiO2

S. Nozaki
Si Ge Net Midterm Review Meeting, September 3 -4, 2001, Marseille, France (INVITED)

2001/09



156 国際会議プロシーディングス等

In-situ study of growth mode by reflection of synchrotron x-ray during the metal organic vapor phase epitaxial growth of InP(共著)

S. Bhunia, K. Uchida, S. Nozaki, H. Morisaki, T. Kawamura, Y. Watanabe, S. Fujikawa, J. Matsui, Y. Kagoshima, and Y. Tsusaka
International Conference on Crystal Growth - 13 in Conjunction with Vapor Growth and Epitaxy - 11, Kyoto, Japan, July 30 - Aug. 4.

2001/07



157 国際会議プロシーディングス等

Formation of Ge nanocrystals passivated with Si by gas evaporation of Si and Ge(共著)

J. J. Si, H. Ono, K. Uchida, S. Nozaki, and H. Morisaki
Materials Research Society Symposium Proceedings
638, F14.4.1-
2000/11



158 国際会議プロシーディングス等

Ultra low K SiO_2_ thin films with nano-voids by gas-evaporation technique(共著)

S. Nozaki, S. Banerjee, K. Uchida, H. Ono, and H. Morisaki
2000 International Interconnect Technology Conference, San Francisco, CA, June 5 - 7, 2000, Proceedings
140-142
2000/06



159 国際会議プロシーディングス等

IMPROVEMENT OF RED LIGHT EMISSION IN H2 TREATED SILICON NANOCRYSTAL(共著)

K. Sato, Y. Sugiyama, T. Izumi, M. Iwase, Y. Show, S. Nozaki and H. Morisaki
Electrochemical Society Proceedings
99-22, 240 - 245
1999



160 国際会議プロシーディングス等

High efficiency electroluminescence from anodically oxidized porous silicon(共著)

Y. Show, S. Nozaki, H. Morisaki, M. Iwase and T. Izumi
Electrochemical Society Proceedings
99-22, 3-9
1999



161 国際会議プロシーディングス等

クラスタービーム法で作製したゲルマニウムナノクリスタル薄膜にみられるクーロンブロッケード特性

Souri Banerjee, S. Nozaki and H. Morisaki
Proceedings of the 10th International Workshop on Semiconductor Physics of Semiconductor Devices, 12/14-12/18/99, Delhi, India
931-936
1999/12



162 国際会議プロシーディングス等

Analysis of twin defects in GaAs(111)B MBE growth(共著)

Y. Park, M. Cich, R. Zhao, P. Specht, E. R. Weber, E. Stach and S. Nozaki
18th North American Conference on Molecular Beam Epitaxy, Banff, Canada, Technical Digest
147-
1999/10



163 国際会議プロシーディングス等

Optical properties of tetragonal germanium nanocrystals deposited by the clcester-beam evaporation technique : New light emitting material for future(共著)

S. Nozaki, S. Sato, S. Rath, H. Ono, and H. Morisaki
Bulletin of Materials Science
22/ 3, 377-381
1999/05



164 国際会議プロシーディングス等

Study of electriccel properties of Ge-nanocrystalline films depositecl by cluster-beam evaporation technique(共著)

S. Banerjee, H. Ono,S. Nozaki, and H. Morisaki
Matrials Research Society Symposium Proceedings
536, 551-556
1998



165 国際会議プロシーディングス等

Improved PL in porousslicon due to the compensation of the defect center by anodic oxidation(共著)

Y. Show, S. Rath, S. Nozaki, and H. Morisaki
Matrials Research Societyu Symposium Proceedings
536, 57-62
1998/11



166 国際会議プロシーディングス等

Volume Plasmons in porous silicon(共著)

S. Sato, S. Nozaki, and H. Morisaki
The 194th Meeting of the Electrochemical Society, Boston, USA, Nov. 1 - 6, 1998, Abstruct
4
1998/11



167 国際会議プロシーディングス等

Plasmon loss features of germanium nanocrystals fabricated by the cluster-beam evaporation technique(共著)

S. Sato, S. Nozaki, and H. Morisaki
The 14th InternationalVaccum Congress, Bermingham, UK, Aug. 31 - Sep. 4, 1998, Abstract Book
109-
1998/08



168 国際会議プロシーディングス等

Germanium nanostructures deposited by the cluster-beam evaporation technique(共著)

S. Nozaki, S. Sato, H. Ono, and H. Morisaki
The 3rd International Symposium on Advanced Physical Fields, Tsukuba, Japan, Fev. 18-20,1998(invited),Proceedings ofthe 3rd International Symposium on Advanced Physical Fields, N. Koguch et al.(ed),J. Surface Analysis,

1998/02



169 国際会議プロシーディングス等

Electronic stucture of the valence band of tetragonal germanium nanostructures deposited by the cluster-beam evaporation technique(共著)

S. Sato, S. Nozaki, H. Morisaki
Electrochemical Society Proceedings
97-11, 177-184
1997



170 国際会議プロシーディングス等

Raman scattering from germanium small particles(共著)

S. Rath, T. Yamada, S. Sato, H. Ono, S. Nozaki, H. Morisaki
Physics of Semiconductor Nanostructures, Narosa Publishing House
232-238
1997



171 国際会議プロシーディングス等

Germanium nanostructures deposited by the cluster-beam evaporation technique(共著)

Shinji Nozaki, S, Sato, H. Ono, H. Morisaki
Physics of Semiconductor Nanostructures, Narosa Publishing House
1-11
1997



172 国際会議プロシーディングス等

Germanium nanostractures deposited by the Cluster-beam evaporation technique(共著)

Shinji Nozaki, S. Sato, H. Ono, H. Morisaki
Physics, Chemistry and Application of Nanostructures : Review and Short Notes to Nanomeeting '97, World Scientific
34-42
1997



173 国際会議プロシーディングス等

Porous alloyed W/si Contacts for light emitting devices(共著)

T. Ichinohe, S. Masaki, S. Nozaki, H. Norisaki
Electrochemical Society Proceedings
97-7, 517-523
1997



174 国際会議プロシーディングス等

Photoluminescence characteristics of HF-treated Silicon nanocrystals (共著)

S. Nozaki, S. Sato, H. Ono, H. Morisaki
Materials Research Society Symposium Proceeding
452, 159-164
1997



175 国際会議プロシーディングス等

Germanium nanostructures deposited by the cluster-beam evaporation technique(共著)

S. NOZAKI, S. SATO, H. ONO, H. MORISAKI, M. IWASE
Nuclear Instruments and Methods in Physics Research B
121, 455-458
1997



176 国際会議プロシーディングス等

Phase transformation of germanium ultrafine particles at high temperature(共著)

S. Nozaki, S. Sato, H. Ono, H. Morisaki, M. Iwase
Materials Research Society Symposium Proceeding
405, 223-228
1996



177 国際会議プロシーディングス等

Photosensitive teyragonal germanium nanostructuctwrs deposited by the cluster-beam evaporation(共著)

Shinji Nozaki, S. Sato, H. Ono, H. Morisaki, M. Iwase, K. Takahashi
Proceeclings of the Third International Conference on Intelligent Materials
260-265
1996



178 国際会議プロシーディングス等

Tetragonal gemanium nanostructures seposited by the cluter-beam evaporation technique(共著)

S. Sato, S. Nozaki, H. Morisaki, M. Iwase
Electrochemical Society Proceedings
95-25, 348-357
1996



179 国際会議プロシーディングス等

Self-Limited stripe width in the seletive metalorganic chemical vapor deposition of GoAs(共著)

K. Yamaguchi, S. Nozaki
Electrochemical Society Proceedings
96-2, 253-261
1996



180 国際会議プロシーディングス等

Visible Ligth Emission from Si Nanostructures(共著)

H. Morisaki, S. Nozaki
Physics, Chemistry and Application of Nanostructures
18-24
1995



181 国際会議プロシーディングス等

Blue Light Emission From Germanium Ultrafine Particles by the Gas Evaporation Tehnique(共著)

Shinji Nozaki, S. Sato, A. Denda, H. Ono, H. Morisaki
Materials Research Sopciety Symposium Proceedings
358, 133-138
1995



182 国際会議プロシーディングス等

Double-Layer Structure and Its Role in Visible-Light Emission from Porous Silicon(共著)

H. Ono, T. Ichinohe, S. Nozaki, H. Morisaki
Electrochemical Society Proceedings
94-17, 240-251
1994



183 国際会議プロシーディングス等

Research Activities on Intelligent Materials in Japan(共著)

K. Takahshi, S. Nozaki
Proceedings of the 2nd International Conference on Intelligent Materials
1230-
1994



184 国際会議プロシーディングス等

Blue Ligth Emission from Silicon Ultrafine Particles(共著)

Shinji Nozaki, S. Sato, H. Ono, H. Morisaki
Materials Research Society Symposium Proceedings
351, 399-404
1994



185 国際会議プロシーディングス等

The thermal stability of heavily carbon-doped GaAs grown by metalorganic molecular beam epitaxy(共著)

H. Sohn, E. R. Weber, Shinji Nozaki, M. Konagai, K. Takahashi
Materials Research Society Symposium Proceedings
262, 129-
1992



186 国際会議プロシーディングス等

Enhanced carbon incorporation in InGaAs grown at low temperature by metalorganic molecular beam epitaxy (MOMBE) (共著)

J. Shirakashi, E. Tokumitsu, M. Konagai, A. Miyano, R. T. Yoshioka, Shinji Nozaki, K. Tkahashi
Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials
705-
1992



187 国際会議プロシーディングス等

Carbon doping in molecular beam epitaxial (MBE) growth of GaAs using neopentane as a novel carbon source

E. Tokumitsu, M. Shrahama, K. Nagao, Shinji Nozaki, M. Konagai, K. Takahashi
The 7th International Conference on Molecular Beam Epitaxy

1992/08



188 国際会議プロシーディングス等

Raman study of heavily carbon-doped p-type InGaAs grown by MOMBE(共著)

J. Shirakashi, E. Tokumitsu, M. Konagai, Shinji Nozaki, K. Takahashi
11th Record of Alloy Semiconductor Physics and Electronics Symposium
53-
1992/07



189 国際会議プロシーディングス等

Anomalous enhancement of beryllium diffusion in heavily carbon-doped GaAs(共著)

E. Tokumitsu, J. Shirakashi, Shinji Nozaki, M. Konagai, K. Takahashi, K. Matsumoto, J. J. Murray
The 19th International Symposium on GaAs and Related Compounds

1992/07



190 国際会議プロシーディングス等

Design of the 21st-century electron devices with intelligent materials(共著)

Shinji Nozaki, K. Takahashi
Proceedings of the 1st International Conference on Intelligent Materials
33-38
1992/03



191 国際会議プロシーディングス等

Characterization of heavily carbon-doped InGaAs grown by MOMBE(共著)

J. Shirakashi, T. Yamada, M. Qi, Shinji Nozaki, K. Takahashi
10th Record of Alloy Semiconductor Physics and Electronics Symposium
297-
1991/07



192 国際会議プロシーディングス等

Heavily C-doped ptype InGaAs Lattice-matched to the GaAs substrate(共著)

T. Yamada, T. Akatsuka, Shinji Nozaki, R. Miyake, M. Konagai, K. Takahashi
Institute of Physics Conference Series (International Symposium and GaAs Related Compounds)
106, 899-
1990



193 国際会議プロシーディングス等

Characterization of MOCVD-grown AlGaAs/GaAs SQW lasers and GaAs MESFETs fabrication on Si substrate with SiO2-back coating(共著)

T. Egawa, H. Tada, Y. Kobayashi, Shinji Nozaki, T. Soga, T. Jimbo, M. Umeno
Materials Research Society Symposium Proceedings
198, 141-
1990



194 国際会議プロシーディングス等

The influence of initial growth on defect generation in MOCVD grown GaAs/Si heteroepitaxial layers(共著)

T. George, E. R. Weber, Shinji Nozaki, A. T. Wu, M. Umeno
Materials Research Society Symposium Proceedings
198, 207-
1990



195 国際会議プロシーディングス等

Undoped GaAs with a low electron concentration grown on Si by MOCVD(共著)

Shinji Nozaki, A. T. Wu, J. J. Murray, T. George, M. Umeno
Materials Research Society Symposium Proceedings
198, 213-
1990



196 国際会議プロシーディングス等

Application of SIMS to the evaluation of crystal quality and electrical behavior of GaAs heteroepitaxy grown on silicon(共著)

J. J. Murray, Shinji Nozaki, T. george, A. T. Wu, P. W. Davies
The 7th International Conference on SIMS

1990



197 国際会議プロシーディングス等

Improvement of GaAs MESFET's characteristics on SiO2-back-coated Si substrate by MOCVD(共著)

T. Egawa, Shinji Nozaki, T. Soga, T. Jimbo, M. Umeno
Extended Abstracts of the 22nd Conference on Solid State Devices and Materials
91-
1990/08



198 国際会議プロシーディングス等

Crystal growth of GaAs on Si using III-V alloy intermediate layer(共著)

M. Umeno, T. Jimbo, T. Soga, T. Egawa, Shinji Nozaki, N. Noto
8th Record of Alloy Semiconductor Physics and Electronics Symposium
343-
1989



199 国際会議プロシーディングス等

Nucleation studies of lattice matched and mis-matched heteroepitaxial layers using the GaAs/AlxGa1-xP/Si system(共著)

T. George, E. R. Weber, A. T. Wu, Shinji Nozaki, N. Noto, M. Umeno
Materials Research Society Symposium Proceedings
148, 253-
1989



200 国際会議プロシーディングス等

Correlation between crystallinity and Schottky diode characteristics of GaAs grown on Si by MOCVD(共著)

T. Egawa, Shinji Nozaki, N. Noto, T. Soga, T. Jimbo, M. Umeno
Materials Research Society Symposium Proceedings
148, 273-
1989



201 国際会議プロシーディングス等

Growth of GaAs on Si using AlGaP intermediate layer(共著)

N. Noto. Shinji Nozaki, T. Egawa, T. Soga, T. Jimbo, M. Umeno
Materials Research Society Symposium Proceedings
148, 247-
1989



202 国際会議プロシーディングス等

Effects of growth temperature on MOCVD-grown GaAs-on-Si(共著)

Shinji Nozaki, N. Noto, M. Okada, T. egawa, T. Soga, T. Jimbo, M. Umeno
Materials Research Society Symposium Proceedings
148, 235-
1989



203 国際会議プロシーディングス等

Electrical properties and its degradation of GaAs/Si grown by MOCVD(共著)

T. Egawa, D. Imanishi, Shinji Nozaki, T. Soga, T. jimbo, M. Umeno
The 1st International Meeting on Advanced Processing and Characterization of Semiconductor Optoelectronic Devices and Integrated Circuits

1989



204 国際会議プロシーディングス等

GaAs/GaAsP superlattice effects on GaAs/Si grown by MOCVD(共著)

M. Umeno, T. Soga, T. Egawa, Shinji Nozaki, T. Jimbo
The 7th International Workshop on Future Electron Devices

1989/10



205 国際会議プロシーディングス等

Solar cell array performance: power analysis with defects(共著)

Shinji Nozaki, A. G. Milnes
Proceedings of the 16th IEEE photovoltaic specialists conference

1982/09



206 解説

酸化シリコンナノ粒子の新機能と応用

野崎眞次
化学工業
57/ 1, 8 – 12-
2006/01



207 解説

酸化シリコンナノ粒子の新機能:ナノの不思議

野崎眞次
SEMI News
21/ 6, 20 – 21-
2005/12



208 解説

Germanium Nanocrystals(共著)

S. Nozaki, S. Sato, and H. Morisaki

3, 805-820
2004



209 解説

米国での17年間

野崎真次
応用物理
66/ 8, 874-
1997



210 解説

IV族半導体ナノクリスタルの可視発光

野崎真次
電気学会技術報告書
627, 70-77
1997/04



211 解説

半導体クラスタの物性と評価

野崎真次
電気学会技術報告
583
1996/04



212 解説

IV族半導体超微粒子の構造と発光(共著)

森崎 弘、野崎真次
真空
38/ 11, 935-942
1995



213 解説

インテリジェント材料の最近の研究動向(共著)

野崎真次、高橋 清
金属
66-
1992/09