論文
公開件数:183件
No. 種別 査読の有無 標題 単著・共著区分 著者 誌名 巻号頁 出版日 ISSN DOI URL
1 一般論文

Low Sunlight Concentration Properties of InAs Ultrahigh-Density Quantum-Dot Solar Cells

R. Suzuki, K. Terada, K. Sakamoto, T. Sogabe and K. Yamaguchi
Jpn. J. Appl. Phys.
58, (2019), pp.071004 1.- pp.071004 7.
2019



2 一般論文

Molecular Beam Deposition of High-Density InAs Quantum Dots on SiOx Films

A. Makaino, Y. Tanaka and K. Yamaguchi
Jpn. J. Appl. Phys.
58, (2019), pp.SDDF07 1.- pp.SDDF07 4.
2019



3 一般論文

Low Sunlight Concentration Properties of InAs Ultrahigh-Density Quantum-Dot Solar Cells
共著
R. Suzuki, K. Terada, K. Sakamoto, T. Sogabe and K. Yamaguchi
Jpn. J. Appl. Phys.
58, 071004 1-071004 7.
2019



4 一般論文

Molecular Beam Deposition of High-Density InAs Quantum Dots on SiOx Films
共著
A. Makaino, Y. Tanaka and K. Yamaguchi
Jpn. J. Appl. Phys.
58, SDDF07 1-SDDF07 4.
2019



5 一般論文

Optical Transition and Carrier Relaxation in a Type-II InAs/GaAsSb Quantum Dot Layer
共著
R. Sugiyama, S. Tatsugi, T. Sogabe and K. Yamaguchi
Jpn. J. Appl. Phys.
58, 012004 1-012004 5.
2019



6 一般論文

Self-Formation of InAs Quantum Dots on SiOx/Semiconductor Substrates by Molecular Beam Deposition

A. Makaino, K. Sakamoto, T. Sogabe, S. Kobayashi and K. Yamaguchi
Appl. Phys. Express
11, (2018), pp.085501 1.-pp.085501 4.
2018



7 一般論文

Strongly Iridescent Hybrid Photonic Sensors Based on Self-Assembled Nanoparticles for Hazardous Solvent Detection

A. Sato, Y. Ikeda, K. Yamaguchi and V. Vohra
Nanomaterials
8, (2018), pp.169 1.- pp.169 10.
2018



8 一般論文

Coarsening Process of High-Density InAs Quantum Dots on Sb-Irradiated GaAs

N. Kakuda and K. Yamaguchi
Jpn. J. Appl. Phys.
57, (2018), pp.045601 1.- pp.045601 5.
2018



9 一般論文

Growth process and Photoluminescence Properties of In-Plane Ultrahigh-Density InAs Quantum Dots on InAsSb/GaAs(001)

S. Oikawa, A. Makaino, T. Sogabe and K. Yamaguchi
Phys. Status Solidi B, (2017)
pp.1700307 1.-pp.1700307 5.
2017



10 一般論文

Recent Progress on Quantum Dot Solar Cells: a review

T. Sogabe, Q. Shen and K. Yamaguchi
J. Photonics for Energy
pp.040901 1-27
2016



11 一般論文

Self-Formation of Ultrahigh-Density (1012 cm-2) InAs Quantum Dots on InAsSb/GaAs(001) and Their Photoluminescence Properties

K. Sameshima, T. Sano and K. Yamaguchi
Appl. Phys. Express
9, pp.075501 1-4
2016



12 一般論文

Fabrication of GaAs/AlAs Micro-Pillar Cavities Including Low-Density InAs Quantum Dots and Their Photoluminescence Properties

H. Yamashita, N. Kawamoto, Y. Ogawa and K. Yamaguchi
Jpn. J. Appl. Phys
54, pp.06FH03 1-4
2015



13 一般論文

Observation of optical anisotropy of highly uniform InAs quantum dots

M. Uemura, J. Ohta, R. Yamaguchi, K. Yamaguchi, A. Tackeuchi
Journal of Crystal Growth
378, 463-465
2013



14 一般論文

Wideband luminescence of high-density InAs quantum dots on GaAsSb/GaAs layers

Yuji Osaka, Hiroyuki Tanabe, Kazuhiro Yamada, Koichi Yamaguchi
Journal of Crystal Growth
378, 422-425
2013



15 一般論文

Long Carrier Lifetime in Ultrahigh Density InAs Quantum Dot Sheet of Intermediate Band Solar Cells

Miyuki Shiokawa, Koichi Yamaguchi
The 39th IEEE Photovoltaic Specialists Conference
No.482-
2013/06



16 一般論文

Quantum-Dot Density Dependence of Power Conversion Efficiency of Intermediate-Band Solar Cells
共著
K. Sakamoto, Y. Kondo, K. Uchida and K. Yamaguchi
J. Appl. Phys
-112, (2012) pp.124545 1-4
2012



17 一般論文

Self-Formation of In-Plane Ultrahigh Density InAs Quantum Dots on GaAsSb/GaAs(001)

Edes Saputra, Jun Ohta, Naoki Kakuda, Koichi Yamaguchi
Applied Physics Express
5, 125502 1-3
2012/10



18 一般論文

In-Plane Quantum-Dot Superlattices of InAs on GaAsSb/GaAs(001) for Intermediate Band Solar-Cells

H.Fujita, K.Yamamoto, J.Ohta, Y.Eguchi and K.Yamaguchi
Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE
2612-2614
2011



19 一般論文

Stacking Growth of In-Plane InAs Quantum-Dot Superlattices on GaAsSb / GaAs (001) for Solar Cell Applications

T.Inaji, J.Ohta, and K.Yamaguchi
Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE
1885-1888
2010



20 一般論文

Time-Resolved X-ray Diffraction Measurements of High-Density InAs Quantum-Dots on Sb/GaAs Layers and the Suppression of Coalescence by Sb-Irradiated Growth Interruption

N. Kakuda, T. Kaizu, M. Takahasi, S. Fujikawa, and K. Yamaguchi
Jpn. J. Appl. Phys
49, 95602 1-4
2010



21 一般論文

Sb-mediated growth of high-density InAs quantum dots and GaAsSb embedding growth by MBE

N. Kakuda, T. Yoshida, and K. Yamaguchi
Appl. Surf. Sci
254, 8050-8053
2008



22 一般論文

Uniform formation of high-density InAs quantum dots by InGaAs capping growth

S. Tonomura, and K. Yamaguchi
J. Appl. Phys
104, 054909-1-4-
2008



23 一般論文

In situ determination of Sb distribution in Sb/GaAs(001) layer for high-density InAs quantum dot growth

T. Kaizu, M. Takahasi, K. Yamaguchi, and J. Mizuki
J. Cryst. Growth
310, 3436-3439
2008



24 一般論文

Generation of highly circularly polarized light from uniform InAs/GaAs quanutm dots

K.Kusunoki, N.Tsukiji, T.Umi, A.Tackeuchi, K.Yamaguchi
Physics Status Solidi C
5/ 1, 378-381
2008/01



25 一般論文

Surface Reconstructions on Sb-irradiated GaAs(001) Formed by Molecular Beam Epitaxy

N.Kakuda, S.Tsukamoto, A.Ishii, K.Fujiwara, T.Ebisuzaki, K.Yamaguchi and Y.Arakawa
Microelectronics Journal
38, 620-624
2007



26 一般論文

In-Plane Self-Arrangement of High-Density InAs Quantum Dots on GaAsSb/GaAs(001) by Molecular Beam Epitaxy

T.Kanto and K.Yamaguchi
J. Appl. Phys.
101, 094901 1-4.
2007



27 一般論文

Structure of GaSb/GaAs(001) Surface Using the First Principles Caluculation

A.Ishii, K.Fujiwara, S.Tukamoto, N.Kakuda, K.Yamaguchi and Y.Arakawa
J. Cryst. Growth
301-302, 880-883
2007



28 一般論文

Modification of InAs Quantum Dot Structure During Annealing

T.Kaizu, M.Takahashi, K.Yamaguchi and J.Mizuki
J. Cryst. Growth
301-302, 248-251
2007



29 一般論文

Closely Stacking Growth of Highly Uniform InAs Quantum Dots on Self-Formed GaAs Nanoholes

N.Tsukiji and K.Yamaguchi
J. Cryst. Growth
301-302, 849-852
2007



30 一般論文

Two-Exciton State in GaSb/GaAs Type-II Quantum Dots Studied using Near-Field Photoluminescence Spectroscopy

K.Matsuda, S.V.Nair, H.E.Ruda, Y.Sugimoto, T.Saiki and K.Yamaguchi
Appl. Phys. Lett.
90/ 1, 013101-1~013101-3-
2007



31 一般論文

Field Emission of Spin-Polarized Electrons Extracted from Photoexcited GaAs Tip

M.Kuwahara, T.Nakanishi, S.Okumi, M.Yamamoto, M.Miyamaoto, N.Yamamoto, K.Yasui, T.Morino, R.Sakai, K.Tamagaki and K.Yamaguchi
Jpn. J. Appl. Phys
45/ 8A, 6245-6249
2006



32 一般論文

Spin Relaxation and Antiferromagnetic Coupling in Semiconductor Quantum Dots

A.Tackeuchi, T.Kuroda, K.Yamaguchi, Y.Nakata, N.Yokoyama and T.Takagahara
Physica E
32, 354-358
2006



33 一般論文

Self-Formation of High-Density and High-Uniformity InAs
Quantum Dots on Sb/GaAs Layers by Molecular Beam Epitax

M.Ohta, T.Kanto and K.Yamaguchi
Jpn. J. Appl. Phys.
45/ 4B, 3427-3429
2006



34 一般論文

Self-Assembled InAs Quantum-Dot Chains on Self-Formed GaAs
Mesa-Stripes by Molecular Beam Epitaxy

T.Kanto and K.Yamaguchi
Jpn. J. Appl. Phys.
Vol.44/ No.10, 7690-7693
2005



35 一般論文

Control of Light Emitting Wavelength from Uniform InAs
Quantum Dots by Annealing

Y.Kobayashi and K.Yamaguchi
Appl. Surf. Sci.
Vol.244, 88-91
2005



36 一般論文

Self-Assembled InAs Quantum Dots on GaSb/GaAs(001) layers by Molecular Beam Epitaxy

K.Yamaguchi and T.Kanto
J. Crystal Growth
Vol.275, e2269-e2273
2005



37 一般論文

Analysis of Sb-As Surface Exchange Reaction in Molecular Beam Epitaxy of GaSb/GaAs Quantum Wells

T.Nakai and K.Yamaguchi
Jpn. J. Appl. Phys.
Vol.44/ No.6A, 3803-3807.
2005/06



38 一般論文

Control of Self-Formed GaAs Nanoholes Combined with Embedded InAs Quantum Dots

T.Satoh and K.Yamaguchi
Jpn. J. Appl. Phys.
Vol.44/ No.4B, 2672-2675.
2005/04



39 一般論文

Atomically controlled GaSb-termination of GaAs surface and its properties

T.Miura, T.Nakai and K.Yamaguchi
Appl. Surf. Sci.
Vol.237, 242-245
2004



40 一般論文

Spin Relaxation Dynamics in Highly Uniform InAs Quantum Dots

A.Takeuchi, R.Ohtsubo, K.Yamaguchi, M.Murayama, T.Kitamura, T.Kuroda and T.Takagahara
Appl. Phys. Lett.
Vol.84, 3576-3578
2004



41 一般論文

Controlled Stacking Growth of Uniform InAs Quantum Dots by Molecular Beam Epitaxy

Y.Suzuki, T.Kaizu and K.Yamaguchi
Physica E
Vol.21/2-4, 555-559
2004



42 一般論文

Self-Assembled GaAs/GaSb Quantum Dots by Molecular Beam Epitaxy

S.Iwasaki, T.Nakai and K.Yamaguchi
Trans. MRS-J
Vol.29/ No.1, 127-129
2004



43 一般論文

Self-Formation of Uniform InAs Quantum Dots and Quantum-Dot Chains

K.Yamaguchi, T.Kaizu, T.Kanto and Y.Suzuki
Trans. MRS-J
Vol.29/ No.1, 117-121
2004



44 一般論文

Control of GaSb/GaAs Nanostructures by Molecular Beam Epitaxy

T.Nakai, S.Iwasaki and K.Yamaguchi
Jpn. J. Appl. Phys.
Vol.43/ No.4B, 2122-2124
2004/04



45 一般論文

Observation of Spin Pauli Blocking in InAs High-Uniform Quantum Dots

M.Murayama, R.Ohtsubo, T.Kitamura, T.Kuroda, K.Yamaguchi and A.Tackeuchi
Phys. Status Sol. (c)
Vol.0/ No.4, 1145-1148
2003



46 一般論文

Direct Observation of Phonon Relaxation Bottleneck in InAs Quantum Dots of High-Uniformity

T.Kitamura, R.Ohtsubo, M.Murayama, T.Kuroda, K.Yamaguchi and A.Tackeuchi
Phys.
Status Sol. (c)
Vol.0/ No.4, 1165-1168
2003



47 一般論文

Shape Transition of InAs from 2-Dimensional Islands and
3-Dimensional Dots by Annealing

S.Iwasaki and K.Yamaguchi
Appl. Surf. Sci.
Vol.216, 407-412
2003



48 一般論文

Facet Formation of Uniform InAs Quantum Dots by Molecular Beam Epitaxy

T.Kaizu and K.Yamaguchi
Jpn. J. Appl. Phys.
Vol.42/ No.6B, 4166-4168
2003/06



49 一般論文

Uniform Formation of Two-dimensional and Three-dimensional InAs Islands on GaAs by Molecular Beam Epitaxy

T.Kaizu and K.Yamaguchi
Jpn. J. Appl. Phys.
Vol.42/ No. 4A, 1705-1708
2003/04



50 一般論文

High Quality InAs Quantum Dots Covered by InGaAs/GaAs Hetero-Capping Layer

Ryou Ohtsubo, Koichi Yamaguchi
Phys. Status Sol. (c)
0/ 3, 939-
2003/03



51 一般論文

One-Dimensional Quantum-Dot Chains of InAs Grown on Strain-Controlled GaAs/InGaAs Buffer Layer by Molecular Beam Epitaxy

Koichi Yamaguchi, Kazuhisa Kawaguchi, Toru Kanto
Jpn. J. Appl. Phys.
41/ 9AB, L996-
2002



52 一般論文

Spin-Polarized Scanning Tunneling Microscopy Using Optically Pumped GaAs Tips

Takeshi Miura, Koichi Yamaguchi
Jpn. J. Appl. Phys.
41/ 6B, 4382-
2002



53 一般論文

Uniform Formation Process of Self-Organized InAs Quantum Dots

Koichi Yamaguchi, Toshiyuki Kaizu, Kunihiko Yujobo, Yoshikuni Saito
J. Cryst. Growth
237-239, 1301-
2002



54 一般論文

Size-Shrinkage Effects of InAs Quantum Dots During the Growth of GaAs Capping Layer

Koichi Yamaguchi, Yoshikuni Saito, Ryou Otsubo
Appl. Surf. Sci
190, 212-217
2002



55 一般論文

Anisotropic Surface Segregation of Indium Atoms in Molecular Beam Epitaxy of InGaAs/GaAs Quantum Wells

K.Yamaguchi, Y.Yasuda, A.Kovacs and P.B.Barna
J. Appl. Phys.
89/ 1, 217-220
2001



56 一般論文

Self Size-Limiting Process of InAs Quantum Dots Grown by Molecular Beam Epitaxy

T.Kaizu and K.Yamaguchi
Jpn. J. Appl. Phys.
40/ 3B, 1885-1887
2001



57 一般論文

Stranski-Krastanov Growth of InAs Quantum Dots with Narrow Size Distribution

K.Yamaguchi, K.Yujobo and T.Kaizu
Jpn. J. Appl. Phys.
39/ 12A, L1245-L1248
2000



58 一般論文

Lifetime and Spin Relaxation Time Measurements of Micro-fabricated GaAs Tips

R.Shinohara, K.Yamaguchi, H.Hirota, Y.Suzuki, T.Manago, H.Akinaga, T.Kuroda and F.Minami
Jpn. J. Appl. Phys.
39/ 12B, 7093-7096
2000



59 一般論文

円偏光励起GaAsマイクロ探針のスピン偏極トンネル電子源への応用

篠原亮一,山口浩一
電子情報通信学会論文誌 C-Ⅱ
J83-C/ 9, 835-841
2000



60 一般論文

光励起GaAs探針を用いたスピン偏極走査型トンネル顕微鏡の試み

山口浩一,篠原亮一
真空
43/ 5, 580-
2000



61 一般論文

One-Dirnensional Alignment of InAs Dots on Strain-Controlled InGaAs Layers by Selective-Area Molecular Beam Epitaxy

K.Yamaguchi, T.Hiraike and K.Kawaguchi
Applied Surface Science
162-163, 590-
2000



62 一般論文

Spin-Polarized Scanning Tunneling Microscope Using Optically Pumped GaAs Microtips

K. Yamaguchi, R. Shinohara and M. Hashimoto
Functional Materials
6/ 3, 575-
1999



63 一般論文

Spin - Sensitive Scanning Tunneling Microscope Using GaAs Optically Pumped Tips

Y. Suzuki, W. Nabhan, R. Shinohara, K. Yamaguchi and T. Katayama
Journal of Magnetism and Magnetic Materials, Multilayers
198-199, 540-
1999



64 一般論文

Effect of Dichroism in the GaAs-Tip-Based Spin Polarized STM

W. Nabhan, Y. Suzuki, R. Shinohara, K. Yamaguchi and E. Tamura
Applied Surface Science
144-145, 570-
1999



65 一般論文

Fabrication of GaAs Microtips and Their Application to Spin-Polarized Scanning Tunneling Microscope

R. Shinohara, K. Yamaguchi, Y. Suzuki and W. Nabhan
Japanese Journal of Applied Physics
37/ 12B, 7151-
1998



66 一般論文

Selective Self-organization of InAs Islands on InGaAs/GaAs Buffer Layers

K. Yamaguchi, T. Hiraike and F. Hiwatashi
Journal of Surface Analysis
4/ 2, 242-
1998



67 一般論文

Selective growth of self-organizing InAs quantum dots on strained inGaAs surfaces

F. Hiwatashi and K. Yamaguchi
J Applied Surface Science
130-132, 737-
1998



68 一般論文

Analysis of Indium Surface Segregation in Molecular Beam Epitaxy of InGaAs/GaAs Quantum Wells

K.Yamaguchi, T.Okada and F.Hiwatashi
Applied Surface Science
117-118, 700-
1997



69 一般論文

Selective Self-Formation of InAs Quantum Dots on Strained InGaAs Layers by Molecular Beam Epitaxy

K.Yamaguchi, E.Waki and H.Hasegawa
Japanese Journal of Applied Physics
36/ 7A, L871-
1997



70 一般論文

原子間力顕微鏡(AFM)の試作

篠原亮一、山口浩一
電気通信大学紀要
9/ 1, 1-
1996



71 一般論文

Fabrication of GaAs Microtips for Scanning Tunneling Microscopy by Wet Etching

K.Yamaguchi and S.Tada
Journal of Electrochemical Society
143/ 8, 2616-
1996



72 一般論文

Scanning tunneling microscope with gallium arsenide microtip fabricated by selective epitaxial growth

Koichi Yamaguchi, Kotaro Okamoto, Shigemi Yugo
Journal of Applied Physics
77/ 11, 6061-
1995



73 一般論文

走査型トンネル顕微鏡(STM)の試作〔II〕

山口浩一、湯郷成美
電気通信大学紀要
7/ 2, 133-
1994



74 一般論文

走査型トンネル顕微鏡(STM)の試作

山口浩一、湯郷成美
電気通信大学紀要
7/ 1, 7-
1994



75 一般論文

クロライド系有機金属を用いた選択MOCVD法によるAlGaAs/GaAs系発光素子の作製

山口浩一、岸田繁樹、岡本孝太郎
電気通信大学紀要
6/ 1, 1-
1993



76 一般論文

Anisotropic Ridge Growth by Step-Flow-Mode Metalorganic Chemical Vapor Deposition Using Diethylgalliumchloride

K.Yamaguchi and K.Okamoto
Japanese Journal of Applied Physics
32/ 11A, 11A/4885-
1993



77 一般論文

Lateral Supply Mechanisms in Selective Metalorganic Chemical Vapor Deposition

Koichi Yamaguchi, Kotaro Okamoto
Japanese Journal of Applied Physics
32/ 4, 1523-
1993



78 一般論文

Surface-Diffusion Model in Selective Metalorganic Chemical Vapor Deposition

K.Yamaguchi, M.Ogasawara and K.Okamoto
Journal of Applied Physics
72/ 12, 5919-
1992



79 一般論文

Doping Properties of GaAs Selective Epilayers Grown by Atmospheric-Pressure Metalorganic Chemical Vapor Deposition

K.Yamaguchi, S.Kishida and K.Okamoto
Japanese Journal of Applied Physics
31, 10A-
1992



80 一般論文

Fabrication of GaAs Fine Stripe Structures by Selective Metalorganic Chemical Vapor Deposition Using Diethylgalliumchloride

Koichi Yamaguchi, Kotaro Okamoto
Applied Physics Letters
59, 27-
1991



81 一般論文

Selective Epitaxial Growth on (100) Vicinal GaAs Surfaces by Atmospheric-Pressure Metalogranic Chemical Vapor Deposition Using Diethylgalliumchloride

K.Yamaguchi and K.Okamoto
Japanese Journal of Applied Physics
30, 2B-
1991



82 一般論文

Analysis of Deposition Selectivity in Selective Epitaxy of GaAs by Metalorganic Chemical Vapor Deposition

K.Yamaguchi and K.Okamoto
Japanese Journal of Applied Physics
29, 11-
1990



83 一般論文

Selective Epitaxial Growth of AlGaAs by Atmospheric Pressure MOCVD Using Diethylgalliumchloride and Diethylaluminumchloride

K.Yamaguchi and K.Okamoto
Japanese Journal of Applied Physics
29, 8-
1990



84 一般論文

Lateral Growth on {111}B GaAs Substrates by Metalorganic Chemical Vapor Deposition

K.Yamaguchi and K.Okamoto
Journal of Crystal Growth
94, 203-
1989



85 一般論文

Atom Beam-Irradiation Effects on Selective Epitaxial Growth of GaAs by Metalorganic Chemical Vapor Deposition

K.Yamaguchi and K.Okamoto
Japanese Journal of Applied Physics
28/ 9, L1489-
1989



86 一般論文

Lateral Growth of GaAs over SiO2 Films Prepared on (111)B Substrates by Metalorganic Chemical Vapor Deposition

K.Yamaguchi and K.Okamoto
Japanese Journal of Applied Physics
28/ 4, 685-
1989



87 一般論文

Selectively Buried Epitaxial Growth of GaAs by Metalorganic Chemical Vapor Deposition

K.Okamoto and K.Yamaguchi
Applied Physics Letters
48/ 13, 849-
1986



88 一般論文

Selective Epitaxial Growth of GaAs by Metalorganic Chemical Vapor Deposition

K.Yamaguchi, K.Okamoto and T.Imai
Japanese Journal of Applied Physics
24/ 12, 1666-
1985



89 招待論文

Recent Progress on Quantum Dot Solar Cells: a review

T. Sogabe, Q. Shen and K. Yamaguchi
J. Photonics for Energy
9, pp.040901 1-27
2016



90 国際会議プロシーディングス等

ThP-57
Wideband luminescence from high-density InAs QDs on GaAsSb/GaAs layers

Y. Osaka, H. Tanabe, K. Yamada and K. Yamaguchi
The 17th International Conference on Molecular Beam Epitaxy
ThP-57
2012/09



91 国際会議プロシーディングス等

Self-formation of ultrahigh-density InAs quantum dots on GaAs(001) substrates by Sb-mediated MBE growth

E. Saputra, T. Sano, J. Ohta and K. Yamaguchi
The 17th International Conference on Molecular Beam Epitaxy
TuP-39
2012/09



92 国際会議プロシーディングス等

Intermediate-Band Solar Cells Using In-Plane Ultrahigh Density InAs/GaAsSb Quantum Dot Sheets

Y.Eguchi, M.Shiokawa, K.Sakamoto and K.Yamaguchi
38th IEEE Photovoltaic Specialists Conference
B13-20
2012/06



93 国際会議プロシーディングス等

In-Plane High Density InAs Quantum Dots on GaAs/Ge(001) for Solar Cell Applications

S.Matsuzaki, H.Hirano, Y.Sakamoto and K.Yamaguchi
21st International Photovoltaic Science and Engineering Conference
2D-4P-08, 458-
2011/11



94 国際会議プロシーディングス等

In-plane densification of InAs self-assembled quantum dots

K.Yamaguchi
SemiconNano2011
P4-
2011/09



95 国際会議プロシーディングス等

In-Plane Quantum-Dot Superlattices of InAs on GaAsSb/GaAs(001) for Intermediate Band Solar-Cells

H.Fujita, K.Yamamoto, J.Ohta, Y.Eguchi and K.Yamaguchi
37th IEEE Photovoltaic Specialists Conference
A20-738
2011/06



96 国際会議プロシーディングス等

Self-Formation of In-Plane InAs QD Superlattices with Long Carrier Lifetime

J.Ohta, H.Fujita and K.Yamaguchi
The 3rd International Symposium on Innovative Solar Cells
P62, P319-
2010/10



97 国際会議プロシーディングス等

Sb-Mediated Self-Formation of Ultra-High Density InAs Quantum-Dots on GaAs(001)

J.Ohta, K.Sakamoto and K.Yamaguchi
16th International Conference on Molecular Beam Epitaxy (MBE 2010)
P1-35.
2010/08



98 国際会議プロシーディングス等

MBE Growth of InAs/GaAs Quantum Dots on Ge(001) Substrates

K.Hirano, T.Seo, K.Minagawa, and K.Yamaguchi
16th International Conference on Crystal Growth
--
2010/08



99 国際会議プロシーディングス等

Stacking Growth of In-Plane InAs Quantum-Dot Superlattices on GaAsSb / GaAs (001) for Solar Cell Applications

T.Inaji, J.Ohta, and K.Yamaguchi
35th IEEE Photovoltaic Specialists Conference
447-C14
2010/06



100 国際会議プロシーディングス等

Self-Formation Control of Ultra-Low Density InAs Quantum-Dots by Intermittent MBE Growth

T.Yanagisawa, Y.Ogawa, and K.Yamaguchi
37th Int. Symposium on Compound Semiconductors (ISCS2010)
MoP11, p.13-
2010/03



101 国際会議プロシーディングス等

Fabrication of High-density and High-uniformity InAs Quantum Dots on GaAs(001) and Ge(001) Substrates for Solar Cell Applications

N.Kakuda, S.Sekiguchi, T.Seo and K.Yamaguchi
The 2nd International Symposium on Innovative Solar Cells
P62, p.319-
2009/12



102 国際会議プロシーディングス等

MBE Growth of InAs/GaAs Quantum Dots on Ge(001) Substrates

T.Seo, K.Hirano and K.Yamaguchi
The 2nd International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures (SemiconNano-2009)
P-16
2009/08



103 国際会議プロシーディングス等

Fine control of super low-density InAs quantum dots by intermittent growth using MBE

S.Sekiguchi, P.Polachet and K.Yamaguchi
The 14th International Conference on Modulated Semiconductor Structures (MSS-14)
Mo-mP15, p.27.
2009/07



104 国際会議プロシーディングス等

Real-time X-ray diffraction measurements during Sb-mediated SK growth and annealing of InAs quantum dots

T.Kaizu, N.Kakuda, M.Takahasi, S.Fujikawa and K.Yamaguchi
The 14th International Conference on Modulated Semiconductor Structures (MSS-14)
Tu-m, p.73.p.187-
2009/07



105 国際会議プロシーディングス等

Annealing properties of InAs quantum dots grown on GaAsSb/GaAs buffer layers

M.Hirose, Jiaying Hu and K.Yamaguchi
The 2nd IEEE Nanotechnology Materials and Devices Conference (NMDC 2008)
Mo P3, pp.48.-
2008/10



106 国際会議プロシーディングス等

Narrow photoluminescence spectra of closely stacked InAs quantum dots with high dot density on GaSb/GaAs(001)

S.Sekiguchi, N.Tsukiji and K.Yamaguchi
The 5th International Conference on Semiconductor Quantum Dots (QD-2008)
Tu-P-101, pp.220.-
2008/05



107 国際会議プロシーディングス等

In Situ X-Ray Crystal Truncation Rod Scattering Measurements of Sb Irradiated GaAs(001) Surface

T.Kaizu, M.Takahasi, K.Yamaguchi and J.Mizuki
34 th International Symposium on Compound Semiconductors (ISCS-2007)
p.274.-
2007/10



108 国際会議プロシーディングス等

Self-Formation Control of Low-Density InAs Quantum Dots by Intermittent Supplying and Annealing Method

P.Patchakapat and K.Yamaguchi
34 th International Symposium on Compound Semiconductors (ISCS-2007)
p.172-
2007/10



109 国際会議プロシーディングス等

MBE Growth of Sb-containing InAs Quantum Dots and GaAsSb Capping Layers

N.Kakuda and K.Yamaguchi
5th Int. Workshop on Semiconductor Surface Passivation (SSP-2007)
p.48-
2007/09



110 国際会議プロシーディングス等

Sb-mediated growth of high-density InAs Quantum Dots and GaAsSb Embedding Growth by MBE

N.Kakuda, T.Yoshida and K.Yamaguchi
2007 International Conference on Indium Phosphide and Related Materials
pp.458-461
2007/05



111 国際会議プロシーディングス等

Atomic structure of epitaxially grown GaSb/GaAs(001) surface using the first principles calculation

A.Ishii, K.Fujiwara, T.Ebisuzaki, N.Kakuda, S.Tsukamoto, K.Yamaguchi and Y.Arakawa
The 14th International Conference on Molecular Beam Epitaxy (MBE2006)
MoP-55, p.72
2006/09



112 国際会議プロシーディングス等

InAs quantum dots formation on Sb irradiated GaAs(001) observed by in situ STM inside MBE growth chamber

N.Kakuda, S,Tsukamoto, K.Yamaguchi and Y.Arakawa
The 14th International Conference on Molecular Beam Epitaxy (MBE2006)
MoP-53, p.70
2006/09



113 国際会議プロシーディングス等

Closely Stacking Growth of Highly Uniform InAs Quantum-Dot Molecules on Self-Formed GaAs Nanoholes

N.Tsukiji and K.Yamaguchi
The 14th International Conference on Molecular Beam Epitaxy (MBE2006)
ThP-56, p.333
2006/09



114 国際会議プロシーディングス等

Uniform Self- Formation of High-Density InAs Quantum Dots by InGaAs Embedding Growth

S.Tonomura, M.Tomita and K.Yamaguchi
2006 International Conference on Solid State Devices and Materials (SSDM 2006)
I-1-3, pp.184-185-
2006/09



115 国際会議プロシーディングス等

High-Density InAs Quantum Dots on GaAsSb/GaAs(001) Layers by Molecular Beam Epitaxy

T.Kanto and K.Yamaguchi
The 4th International Conference on Semiconductor Quantum Dots (QD-2006)
P-18, p.251
2006/05



116 国際会議プロシーディングス等

In-Plane Ordering of Self-Assembled InAs Quantum Dots on
GaAsSb/GaAs(001) Layers by Molecular Beam Epitaxy

T.Kanto and K.Yamaguchi
17th Int. Microprocesses and Nanotechnology Conference (MNC-2005)
28B-9-2, pp.246-247.-
2005/10



117 国際会議プロシーディングス等

Self-Formation of High-Uniformity InAs Quantum-Dots
on GaSb/GaAs Layers by Molecular Beam Epitax

M.Ohta, T.Kanto and K.Yamaguchi
2005 Int. Conference on Solid State Devices and Materials (SSDM-2005)
E-1-4, pp.98-99.-
2005/09



118 国際会議プロシーディングス等

Two-Dimensional Self-Arrangement of InAs Quantum Dots on GaAsSb/GaAs(001) Layers by Molecular Beam Epitaxy

T.Kanto and K.Yamaguchi
International Symposium on Quantum Dots and Photonic Crystals 2005 (QDPC2005)
P-10, p.31
2005/05



119 国際会議プロシーディングス等

In-situ X-ray diffraction study on modification of InAs quantum dot structure during growth interruption

T.Kaizu, M.Takahashi, M.Horita, T.Satoh, K.Yamaguchi and J.Mizuki
Symposium on Quantum Dots and Photonic Crystals 2005 (QDPC2005)
P-16, p.37.
2005/03



120 国際会議プロシーディングス等

Structural Stability of Size-Limited InAs Quantum Dots
during Growth Interruption

M.Horita, T.Kaizu and K.Yamaguchi
International Symposium on Quantum Dots and Photonic Crystals 2005 (QDPC2005)
P-15, p.36.
2005/03



121 国際会議プロシーディングス等

Two-Dimensional Self-Arrangement of InAs Quantum Dots on
GaAsSb/GaAs(001) Layers by Molecular Beam Epitaxy

T.Kanto and K.Yamaguchi
International Symposium on Quantum Dots and Photonic Crystals 2005 (QDPC2005)
P-10, p.31
2005/03



122 国際会議プロシーディングス等

Self-Formation of High-Density and High-Uniformity InAs
Quantum-Dots on GaSb/GaAs Layers by MBE

M.Ohta, T.Kanto and K.Yamaguchi
International Symposium on Quantum Dots and Photonic Crystals 2005 (QDPC2005)
P-7, p.28.
2005/03



123 国際会議プロシーディングス等

Stacking Growth of High-Density InAs Quantum-Dots on
GaSb/GaAs Layers by Molecular Beam Epitaxy

T.Yoshida and K.Yamaguchi
International Symposium on Quantum Dots and Photonic Crystals 2005 (QDPC2005)
P-9, p.30.
2005/03



124 国際会議プロシーディングス等

Control of Self-Assembled InAs Quantum Dots by Molecular Beam Epitaxy

K.Yamaguchi
International Symposium on Quantum Dots and Photonic Crystals 2005 (QDPC2005)
D-5, p.15.
2005/03



125 国際会議プロシーディングス等

Control of Self-Formed GaAs Nanoholes Combined with Embedded InAs Quantum Dots

T.Satoh and K.Yamaguchi
2004 Int. Conference on Solid State Devices and Materials (SSDM-2004)
P9-4, pp.618-619-
2004/09



126 国際会議プロシーディングス等

Self-Assembled InAs Quantum Dots on GaSb/GaAs(001) layers by Molecular Beam Epitaxy

K.Yamaguchi and T.Kanto
14th Int. Conference on Crystal Growth / 12th Int. Conference on Vapor Growth and Epitaxy (ICCG-14/ICVGE-12)
T03-3, p.644.
2004/08



127 国際会議プロシーディングス等

Spin Relaxation Dynamics in Highly Uniform InAs Quantum Dots

A.Tackeuchi, Y.Suzuki, M.Murayama, T.Kitamura, T.Kuroda, T.Takagahara and K.Yamaguchi
27th Int. Conference on the Physics of Semiconductors (ICPS-2004)
(Jul. 26-30, 2004)
2004/07



128 国際会議プロシーディングス等

Control of Light Emitting Wavelength from Uniform InAs
Quantum Dots by Annealing

Y.Kobayashi and K.Yamaguchi
12 th Int. Conference on Solid Films and Surface (ICSFS-12)
P2-11, p.187.
2004/06



129 国際会議プロシーディングス等

Analysis of Sb-As Exchange Reaction in Molecular Beam Epitaxy of GaSb/GaAs Quantum Wells

T.Nakai and K.Yamaguchi
12th Int. Conference on Solid Films and Surface (ICSFS-12)
P1-31, 64.
2004/06



130 国際会議プロシーディングス等

Self-Assembled GaAs/GaSb Quantum Dots by Molecular Beam Epitaxy

S.Iwasaki, T.Nakai and K.Yamaguchi
8 th IUMRS Int. Conference on Advanced Materials 2003 (IUMRS-ICAM 2003)
A1-12-P06, p.7.-
2003



131 国際会議プロシーディングス等

Control of GaSb/GaAs Nanostructures by Molecular Beam
Epitaxy

T.Nakai, S.Iwasaki and K.Yamaguchi
2003 Int. Conference on Solid State Devices and Materials (SSDM-2003)
P8-6, pp.608-609-
2003



132 国際会議プロシーディングス等

Controlled Stacking Growth of Uniform InAs Quantum Dots by Molecular Beam Epitaxy

Y.Suzuki, T.Kaizu and K.Yamaguchi
11 th Int. Conference on Modulated Semiconductor Structures (MSS-11)
B5, pp.163-164
2003



133 国際会議プロシーディングス等

Self-Formation of One-Dimensional InAs Quantum-Dot-Chains on Vicinal GaAs(001) Substrates

T.Kanto and K.Yamaguchi
International Symposium on Quantum Dots and Photonic Crystals 2003 (QDPC2003)
P-2, p.22
2003/11



134 国際会議プロシーディングス等

Uniform Formation of GaSb Quantum Dots by Molecular Beam Epitaxy

M.Horita, S.Iwasaki and K.Yamaguchi
International Symposium on Quantum Dots and Photonic Crystals 2003 (QDPC2003)
P-8, p.28
2003/11



135 国際会議プロシーディングス等

Self-Formation of GaAs Nanoholes Combined with Embedded InAs Quantum Dots

T.Sato and K.Yamaguchi
International Symposium on Quantum Dots and Photonic Crystals 2003 (QDPC2003)
P-3, p.23
2003/11



136 国際会議プロシーディングス等

1.3-μm Light Emission from InAs Quantum Dots in a GaAs Matrix

H.Takeda, T.Kaizu and K.Yamaguchi
International Symposium on Quantum Dots and Photonic Crystals 2003 (QDPC2003)
P-14, p.34
2003/11



137 国際会議プロシーディングス等

Highly Uniform and Highly Dense InAs Quantum Dots by MBE Stacking Growth

T.Kaizu, Y.Suzuki and K.Yamaguchi
International Symposium on Quantum Dots and Photonic Crystals 2003 (QDPC2003)
P-4, p.24.
2003/11



138 国際会議プロシーディングス等

Kelvin Probe Force Microscopy Measurement of InAs Quantum Dots

K.Yoshimoto, S.Konoshita, Y.Sugimoto, M.Abe, S.Morita, T.Kaizu, K.Yamaguchi, K.Matsuda, T.Saiki and D.Fujita
1st Int. Symposium on Active Nano-Characterization and Technology (ANCT-2003)
P-53.
2003/11



139 国際会議プロシーディングス等

Atomically controlled GaSb-termination of GaAs surface and its properties

T.Miura, T.Nakai and K.Yamaguchi
7th Int. Conference on Atomically Controlled of Surfaces, Interfaces and Nanostructures (ACSIN-7)
18P055, p.425.-
2003/11



140 国際会議プロシーディングス等

Observation of Spin-dependent Tunnel Conductance by Spin-polarized Scanning Tunneling Microscopy Using Ni tips

D.Murahara, Y.Kobayashi and K.Yamaguchi
16th Int. Microprocesses and Nanotechnology Conference (MNC-2003)
30P-7-32, pp.232-233.-
2003/10



141 国際会議プロシーディングス等

Observation of Spin Relaxation, Tunneling, Anti-Ferromagnetic Coupling and Spin-Pauli-Blocking in Quantum Dots

A.Takeuchi, R.Ohtsubo, M.Murayama, T.Kitamura, T.Kuroda, Y.Nakata, N.Yokoyama and K.Yamaguchi
2 nd Int. Conference and School on Spintronics and
Quantum Information Technology (SPINTECH II)
(Aug. 4-8, 2003)
2003/08



142 国際会議プロシーディングス等

Facet Formation of Uniform InAs Quantum Dots by Molecular Beam Epitaxy

Toshiyuki Kaizu, Koichi Yamaguchi
15th Int. Microprocesses and Nanotechnology Conference (MNC-2002)
146-
2002/11



143 国際会議プロシーディングス等

Shape Transition of InAs from 2-Dimensional Islands to 3-dimensional Dots by Annealing

Seiki Iwasaki, Koichi Yamaguchi
4 th Int. Symposium on Control of Semiconductor Interfaces(ISCSI-4)
B2-2
2002/10



144 国際会議プロシーディングス等

Observation of Spin Pauli Blocking in InAs High-Uniform Quantum Dots

M.Murayama, R.Ohtsubo, T.Kitamura, T.Kuroda, K.Yamaguchi, A.Takeuchi
2 nd Int. Conference on Semiconductor Quantum Dots (QD-2002)
143-
2002/10



145 国際会議プロシーディングス等

Direct Observation of Phonon Relaxation Bottleneck in InAs High-Uniform Quantum Dots

T.Kitamura, R.Ohtsubo, M.Murayama, T.Kuroda, K.Yamaguchi, A.Takeuchi
2 nd Int. Conference on Semiconductor Quantum Dots (QD-2002)
147-
2002/10



146 国際会議プロシーディングス等

Fabrication of One-Dimensional InAs Quantum-Dot Chains on GaAs/InGaAs Strained Buffer Layer by Molecular Beam Epitaxy

Toru Kanto, Koichi Yamaguchi
2 nd Int. Conference on Semiconductor Quantum Dots (QD-2002)
24-
2002/10



147 国際会議プロシーディングス等

High Quality InAs Quantum Dots Covered by InGaAs/GaAs Hetero-Capping Layer

Ryou Ohtsubo, Koichi Yamaguchi
6th Int. Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies
50-
2002/05



148 国際会議プロシーディングス等

Observation of Spin-polarized Electrons Using STM-differential Conductivity and Photo-assisted Tunneling Measurements

T.Kawagoe, Y.Suzuki, E.Tamura, K.Yamaguchi, and K.Koike
2001 JRCAT Symposium on Atom Technology
287-290
2001/11



149 国際会議プロシーディングス等

Spin-Polarized Scanning Tunneling Microscopy Using Optically Pumped GaAs Tips

Takeshi Miura and Koichi Yamaguchi
14th Int. Microprocesses and Nanotechnology Conference
160-161
2001/10



150 国際会議プロシーディングス等

Size Ordering Effects of InAs Quantum Dots During a GaAs Capping Growth

Yoshikuni Saito, Ryou Otsubo and Koichi Yamaguchi
28th Int. Symposium on Compound Semiconductors
WeP-16, p.156
2001/10



151 国際会議プロシーディングス等

Uniform Formation Process of Self-Organized InAs Quantum Dots

Koichi Yamaguchi, Toshiyuki Kaizu, Kunihiko Yujobo and Yoshikuni Saito
13th Int. Conference on Crystal Growth / 11th Int. Conference on Vapor Growth and Epitaxy
231-
2001/08



152 国際会議プロシーディングス等

Size-Shrinkage Effects of InAs Quantum Dots During the Growth of GaAs Capping Layer

Koichi Yamaguchi, Yoshikuni Saito and Ryou Otsubo
8th Int. Conference on the Formation of Semiconductor Interface
90-91
2001/06



153 国際会議プロシーディングス等

Photo-Excitation Spectra in Spin-Polarized STM Using Optically Pumped GaAs Tip

Y.Suzuki, T.Manago, R.Shinohara, K.Yamaguchi, T.Kawagoe, H.Akinaga, T.Kuroda, F.Minami and S.Yuasa
2000 JRCAT Int. Symposium on Atom Technology
(Nov.7, 2000)-
2000/11



154 国際会議プロシーディングス等

Application of Micro-Fabricated GaAs Tip to Spin-Polarized Scanning Tunneling Microscope

K.Yamaguchi, R.Shinohara, H.Hirota, T.Miura and M.Hashimoto
The Int. Workshop on Polarized Electron Source and Polarimeter 2000(Oct.12-14, 2000)Nagoya
(Oct.12-14, 2000)
2000/10



155 国際会議プロシーディングス等

Photo-Assisted Electron Tunneling from GaAs to Ferromagnets in Micro-Fabricated Junctions and Spin-Polarized STM

Y.Suzuki, T.Manago, H.Akinaga, T.Kawagoe, R.Shinohara, K.Yamaguchi, E.Tamura and S.Yuasa
Int. Symposium on Surface and Interface: Properties of Different Symmetry Crossing-2000(Oct.17-20, 2000)Nagoya
(Oct.17-20, 2000)
2000/10



156 国際会議プロシーディングス等

Self Size Limit of InAs Quantum Dots Grown by Molecular Beam Epitaxy

K.Yamaguchi and T.Kaizu
3rd Int. Symposium on Formation, Physics and Device Application of Quantum Dot Structures(Sep. 10-14, 2000)Sapporo, Tu1-10
88-
2000/09



157 国際会議プロシーディングス等

Lifetime and Spin Relaxation Time Measurements of Micro-fabricated GaAs Tips

R.Shinohara, K.Yamaguchi, H.Hirota, Y.Suzuki, T.Manago, H.Akinaga, T.Kuroda and F.Minami
13th Int. Microprocesses and Nanotechnology Conference(Jul.11-13, 2000)Tokyo, Digest of Papers, 12C-6-7
170-171
2000/07



158 国際会議プロシーディングス等

Self-Organized Quantum Dot Chains of InAs Grown by Molecular Beam Epitaxy

K.Yamaguchi and K.Kawaguchi
10th Int. Conference on Solid Films and Surfaces(Jul.9-13, 2000)Princeton, We-P-104
We-P-104-
2000/07



159 国際会議プロシーディングス等

Spin-Polarized STM Using Optically Pumped GaAs Tips

S.Yuasa
Int. Symposium on Spin-Electronics(Jul. 3-6, 2000)Germany
(Jul. 3-6, 2000)
2000/07



160 国際会議プロシーディングス等

Possible Parasitic Signals in the Spin-Polarized STM Using Optically Pumped GaAs Tips

Y. Suzuki, W. Nabhan, R. Shinohara, K. Yamaguchi, T. Kawagoe, K. Shigeto, T. Manago, H. Akinaga, T. Kuroda, F. Minami and S. Yuasa
Int. Symposium on Nanoscale Magnetism and Transport, Sendai
(March 8-10, 2000)
2000/03



161 国際会議プロシーディングス等

Progress Toward Spin-Polarized STM Using Ferromagnetic and Semiconductor Tips

T. Kawagoe, Y. Suzuki, R. Shinohara, K. Yamaguchi, T. Sato and E. Tamura
'99 JRCAT Int. Symposium on Atom Technology, Tokyo
pp.311-314
1999/11



162 国際会議プロシーディングス等

Observation of Spin-Dependent Tunneling Current Using Optically Pumped GaAs Microtip

R. Shinohara and K. Yamaguchi
12th Int. Microprocesses and Nanotechnology Conference, Yokohama, Digest of Papers, 7C-6-17
128-129
1999/07



163 国際会議プロシーディングス等

One-Dimensional Alignment of InAs Quantum Dots on Strain-Controlled InGaAs Layers by Selective-Area Molecular Beam Epitaxy

K. Yamaguchi, T. Hiraike and K. Kawaguchi
5th Int. Conference on Atomically Controlled Surfaces, Interface and Nanostructures, Aix-en Provence,
TH.A 14.50 O-
1999/07



164 国際会議プロシーディングス等

Selective Self-Organization of InAs Quantum Dots on InGaAs/GaAs Buffer Layers

K.Yamaguchi, T.Hiraike and F.Hiwatashi
3rd International Symposium on Advanced Physical Fields, Fabrication of Nanostructures
P-2
1998



165 国際会議プロシーディングス等

A Trial of Spin-Sensitive STM Using Micro-Fabricated GaAs Tips

Y. Suzuki, R. Shinohara, W. Nabhan, K. Yamaguchi and T. Sato
1998 JRCAT Int. Symposium on Atom Technology,Tokyo
P48-
1998/11



166 国際会議プロシーディングス等

Observation of Co Ultrathin Films Using Scanning Tunneling Microscope Equipped with GaAs Photoexcited Tips

Y. Suzuki, W. Nabhan, R. Shinohara and K. Yamaguchi
Int. Symposium on Surface and Interface, Properties of Different Symmetry Crossing,Tokyo
48-
1998/11



167 国際会議プロシーディングス等

Effect of Dichroism in the GaAs Tip-Based Spin-Polarized STM

W.Nabhan, Y. Suzuki, R. Shinohara and K. Yamaguchi
14th Int. Vaccuum Congress and 10th Int.Conference on Solid Surfaces,Birmingham
(Aug.31-Sep.4, 1998)
1998/08



168 国際会議プロシーディングス等

Fabrication of GaAs Microtips and Its Application to Spin-Polarized Scanning Tunneling Microscope

K. Yamaguchi, R. Shinohara, Y. Suzuki and W. Nabhan
11th Int. Microprocesses and Nanotechnology Conference
285-286
1998/07



169 国際会議プロシーディングス等

Spin-Sensitive Scanning Tunneling Microscope Using GaAs Optically Pumped Tips

Y. Suzuki, W. Nabhan, K. Yamaguchi and T. Katayama
3rd International Symposium on Metallic Multilayers
(Jun.14-19, 1998)
1998/06



170 国際会議プロシーディングス等

Selective Growth of Self-Organizing InAs Quantum Dots on Strained InGaAs Surfaces

F.Hiwatashi and K.Yamaguchi
4th International Symposium on Atomically Controlled of Surfaces and Interfaces
PC44, pp.294-295
1997



171 国際会議プロシーディングス等

Analysis of Indium Surface Segregation in Molecular Beam Epitaxy of InGaAs/GaAs Quantum Wells

K.Yamaguchi, T.Okada and F.Hiwatashi
2nd International Symposium on Control of Semiconductor Interfaces
P5-5, p.81
1996



172 国際会議プロシーディングス等

Self-Limited Stripe Width in Selective Metalorganic Chemical Vapor Deposition Growth of GaAs

K.Yamaguchi and S.Nozaki
Proceedings of 24th State-of-the-Art Program on Compound Semiconductors
253-
1996



173 解説

量子ドットの基礎知識と結晶成長およびデバイス応用

山口浩一
R&D支援センター・セミナー資料
pp.1.-pp.73.
2018/08



174 解説

量子ドットデバイスと最先端太陽電池開発
単著
山口浩一
「クリーンテック・水素社会への挑戦」講演集
5-16
2016/10



175 解説

光デバイス応用に向けたⅢ‐Ⅴ族半導体量子ドットの結晶技術の進展
単著
山口 浩一
OPTRONICS
394/ 2014年10月, 79-84
2014/10



176 解説

量子ドットの作製技術・構造制御と応用

山口 浩一
技術情報協会セミナー テキスト
1-43
2014/07



177 解説

半導体量子ドットのデバイス応用における作製技術の課題と展望
単著
山口浩一
研究開発リーダー
3月号, 38-42
2014/03



178 解説

量子ドットの作製技術とデバイスへの応用
単著
山口浩一
技術セミナー
1-27
2013/10



179 解説

Sb原子による表面・界面改質効果を利用したInAs量子
ドットの自己形成制御

山口浩一, 菅藤 徹,太田雅彦
表面科学
27/ 12, 36-43
2006



180 解説

高均一量子ドットの自己形成

山口浩一
応用物理学会誌
74/ 3, 307-312
2005/03



181 解説

半導体量子ドット構造の自己組織化成長

山口浩一
物性研究(第47回物性若手夏の学校(2002年8月,東京)講義ノート)
79/ 3, 491-
2002/12



182 解説

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真空
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