論文
公開件数:125件
No. 種別 査読の有無 標題 単著・共著区分 著者 誌名 巻号頁 出版日 ISSN DOI URL
1 一般論文

Deep level characterization improved by Laplace charge transient spectroscopy

Shumpei Koike, Kazuo Uchida, Shinji Nozaki
International Journal of Engineering and Applied Sciences
5/ 2, 66-69
2018/02



2 一般論文

ZnO-nanorods: a possible white LED phosphor

Sachindra Nath Sarangi, Arun T, Dinseh K. Ray, Pratap Kumar Sahoo, Shinji Nozaki, Noriyuki Sugiyama and Kazuo Uchida
AIP Conference Proceedings
1832, 060022-1-060022-3
2017

10.1063/1.4980427

3 一般論文

Development of Laser Lift-off Process with a GaN/Al0.7Ga0.3N Strained-Layer Superlattice for Vertical UVC LED Fabrication

David Trung Doan, Shinji Nozaki and Kazuo Uchida
International Journal of Engineering and Applied Sciences
4/ 4, 51-56
2017/04/01
2394-3661


4 一般論文

Growth mechanism of single-crystalline NiO thin films grown by metalorganic chemical vapor deposition
共著
Teuku Muhammad Roffi, Shinji Nozaki and Kazuo Uchida
Journal of Crystal Growth
451, 57-64
2016/06/27

10.1016/j.jcrysgro.2016.06.047

5 一般論文

InGaP/GaAs heterojunction photosensor powered by an on-chip GaAs solar cell for energy harvesting
共著
Phuc Hong Than, Kazuo Uchida, Takahiro Makino, Takeshi Oshima and Shinji Nozaki
Japanese Journal of Applied Physics
55/ 4S, 04ES09-1-04ES09-6
2016/03/16



6 一般論文

Structural, electrical, and optical properties of Co x Ni 1-x O films grown by metalorganic chemical vapor deposition
共著
T. M. Roffi, K. Uchida and S. Nozaki
J. Cryst. Growth
414, 123-129
2015



7 一般論文

Effects of electrical stress on the InGaP/GaAs heterojunction phototransistors
共著
Phuc Hong Than, Kazuo Uchida, and Shinji Nozaki
IEEE Transactions on Device and Materials Reliability
15/ 4, 1-6
2015/12



8 一般論文

Low temperature formation of high-quality gate oxide by ultraviolet irradiation on spin-on-glass

R. Usuda, K. Uchida, and S. Nozaki
Applied Physics Letters
107, 182903-1-182903-4
2015/11/03



9 一般論文

Visible-blind ultraviolet photodiode fabricated by UV oxidation of metallic zinc on p-Si

Dongyuan Zhang, Kazuo Uchida, and Shinji Nozaki
Journal of Applied Physics
118, 094502-1-094502-8
2015/09/03

10.1063/1.4929961

10 一般論文

High-quality gate oxide formed at 150 oC for flexible electronics
共著
Yasuhiro Iijima, Ryo Usuda, Kazuo Uchida, and Shinji Nozaki
Japanese Journal of Applied Physics
53/ 8S1, 08LC05-1-08LC05-5
2014/07/23

10.7567/JJAP.53.08LC05

11 一般論文

NiO/Si heterostructures formed by UV oxidation of nickel deposited on Si substrates
共著
Dongyuan Zhang, Shinji Nozaki and Kazuo Uchida
J. Vac. Sci. Technol. B
32/ 3, 0131202-1-0131202-6
2014/03

10.1116/1.4868634

12 一般論文

Selective growth of ZnO nanorods by the hydrothermal technique
共著
S. Nozaki, S.N. Sarangi, S.N. Sahu and K. Uchida
Advances in Natural Sciences: Nanoscience and Nanotechnology
4/ 1, 015008-
2013



13 一般論文

InGaP/GaAsヘテロ接合フォトトランジスタの温度特性

Phuc Hong THAN、高木保志、内田和男、野崎眞次
電子情報通信学会論文誌 C
J96-C/ 9, 238-244
2013



14 一般論文

Hydrothermal growth of zinc oxide nanorods and glucose-sensor application
共著
Shinji Nozaki, Sachindra N. Sarangi, Kazuo Uchida, and Surendra Sahu
Soft Nanoscience Letters
3/ -, 23-26
2013/12



15 一般論文

Characterization of partially ordered GaInP/GaAs heterointerfaces by the quantum Hall effect
共著
Kazuo Uchida, Kiwamu Satoh, Keita Asano, Atsushi Koizumi, Shinji Nozaki
Journal of Crystal Growth
370, 136-140
2013/05



16 一般論文

Highly p-typed superlattices consist of undoped InAs and carbon-doped GaAs layers

Kazuo Uchida, Heisuke Kanaya, Hiroshi Imanishi, Atushi Koizumi, Shinji Nozaki
Journal of Crystal Growth
370, 197-199
2013/05



17 一般論文

E1/E2 traps in 6H-SiC studied with Laplace deep level transient spectroscopy

A. Koizumi, V. P. Markevich, N. Iwamoto, S. Sasaki, T. Ohshima, K. Kojima, T. Kimoto, K. Uchida, S. Nozaki, B. Hamilton, and A. R. Peaker
Applied Physics Letters
102/ 3, 032104-1 – 032104-4-
2013/01



18 一般論文

Defects in an electron-irradiated 6H-SiC diode studied by alpha particle induced charge transient spectroscopy
共著
Naoya Iwamoto, Atsushi Koizumi, Shinobu Onoda, Takahiro Makino, Takeshi Ohshima, Kazutoshi Kojima, S Koike, Kazuo Uchida and Shinji Nozaki
Materials Science Forum
717, 267-270
2012



19 一般論文

High-quality single crystalline NiO with twin phases grown on sapphire substrate by metalorganic vapor phase epitaxy

Kazuo Uchida, Ken-ichi Yoshida, Dongyuan Zhang, Atsushi Koizumi and Shinji Nozaki
AIP ADVANCES
2, 042154-1-042154-5-
2012/11



20 一般論文

Compensation-dependent carrier transport of Al-doped p-type 4H-SiC

共著
Atsushi Koizumi, Naoya Iwamoto, Shinobu Onoda, Takeshi Ohshima, Tsunenobu Kimoto, Kazuo Uchida and Shinji Nozaki
Materials Science Forum
679-680, 201-204
2011



21 一般論文

Single-alpha-particle-induced charge transient spectroscopy of the 6H-SiC p+n diode irradiated with high-energy electrons

N. Iwamoto, A. Koizumi, S. Onoda, T. Makino, T. Ohshima, K. Kojima, S. Koike, K. Uchida, and S. Nozaki
IEEE Transactions on Nuclear Science
58/ 6, 3328-3332
2011/12



22 一般論文

Transient analysis of an extended drift region in a 6H-SiC diode formed by a single alpha particle strike and its contribution to the increased charge collection

N. Iwamoto, S. Onoda, T. Makino, T. Ohshima, K. Kojima, A. Koizumi, K. Uchida, and S. Nozaki
IEEE Transactions on Nuclear Science
58/ 1, 305-3313
2011/02



23 一般論文

In situ CBrCl3 etching to control size and density of InAs/GaAs quantum dots

Atsushi Koizumi, Hiroshi Imanishi, Kazuo Uchida and Shinji Nozaki
Journal of Crystal Growth
315/ 1, 106-109
2011/01



24 一般論文

Comparative Study on Reliability of InP/InGaAs Heterojunction Bipolar Transistors with Highly Zn- and C-Doped Base Layers
共著
Koizumi, Atsushi, Oshitanai, Kazuki, Lee, Jaesung, Uchida, Kazuo, Nozaki, Shinji
RELIABILITY AND MATERIALS ISSUES OF SEMICONDUCTOR OPTICAL AND ELECTRICAL DEVICES AND MATERIALS
1195, 35-42
2010
0272-9172
10.1557/PROC-1195-B06-02

25 一般論文

Charge collection efficiency of 6H-SiC P+N diodes degraded by low-energy electron irradiation
共著
N. Iwamoto, S. Onoda, T. Ohshima, K. Kojima, A. Koizumi, K. Uchida and S. Nozaki
Materials Science Forum
645-648, 921- 924
2010



26 一般論文

High-quality oxide formed by evaporation of SiO nanopowder: Application to MOSFET’s on plastic substrates and GaN epilayers

S. Nozaki, S. Kimura, A. Koizumi, H. Ono and K. Uchida
Materials Science in Semiconductor Processing
11, 384-389
2009



27 一般論文

Characterization of MOVPE-grown p-InGaAs/n-InP interfaces
共著
Kazuo Uchida, HIdenori Yamato, Yoshikuni Tommioka, Atsushi Koizumi and Shinji Nozaki
Journal of Crystal Growth
311, 4011-4015
2009/07



28 一般論文

High-quality oxide formed by evaporation of SiO nanopowder: Application to MOSFET’s on plastic substrates and GaN epilayers

S. Nozaki, S. Kimura, A. Koizumi, H. Ono and K. Uchida
Materials Science in Semiconductor
Processing
11, 384-389
2009/01



29 一般論文

Yellowish-white photoluminescence from ZnO nanoparticles doped with Al and Li

J. Nayak, S. Kimura, S. Nozaki, H. Ono, and K. Uchida
Superlattices and Microstructures
42, 438-443
2007



30 一般論文

Synthesis, properties and applications of germanium nanocrystals
共著
Nozaki, Shinji, Ono, Hiroshi, Uchida, Kazuo, Morisaki, Hiroshi
Nano-Scale Materials: From Science to Technology
35-42
2006



31 一般論文

Selective formation of size-controlled silicon nanocrystals by photosynthesis in SiO nanoparticle thin film
共著
Chen, Changyong, Kimura, Seiji, Nozaki, Shinji, Ono, Hiroshi, Uchida, Kazuo
IEEE TRANSACTIONS ON NANOTECHNOLOGY
5/ 6, 671-676
2006/11
1536-125X
10.1109/TNANO.2006.885033

32 一般論文

Correlation between the base-emitter interface crystalline quality and the current gain in InGaP/GaAs HBTs grown by MOVPE
共著
K. Uchida, A. Kurokawa, F. Yang Z. Jin, S. Nozaki and H. Morisaki
Jornal of Crystal Growth
298, 861-866
2006/11



33 一般論文

Passivation of InP-based HBTs
共著
Z. JIn, K. Uchida, S. Nozaki, W. Prost and F.-J. Tegude
Applied surface science
252, 7664-7670
2006/05



34 一般論文

Fabrication of nanostructured palladium-doped SiO 2 films with variable temperature coefficient of resistivity
共著
T. Ichinohe, S. Masaki, K. Uchida, S. Nozaki and H. Morisaki
Thin Solid Films
466/ 1, 27-33
2004



35 一般論文

Excitation and pressure effects on low temperature photoluminescence from GaAs/GaInP heterostructures
共著
A. Nagata, T. Kobayashi, AD. Prins, Y. Homma, K. Uchida and J. Nakahara
Phys. Stat. Sol.(b
241/ 14, 3279-3284
2004



36 一般論文

Growth and characterization of p-type InGaAs on InP substrates by LP-MOVPE using a new carbon-dopant source, CBrCl3

Kazuo Uchida, Kazuma Takahashi, Shogo Kabe, Shinji Nozaki and Hiroshi Morisaki
Journal of Crystal Growth
272, 658-663
2004/10



37 一般論文

Real-time measurement of rocking curves during MOVPE growth of GaxIn 1− xP/GaAs
共著
S. Bhunia, T. Kawamura, Y. Watanabe, S. Fujikawa, J. Matsui, Y. Kagoshima, Y.Tsusaka, K. Uchida, N. Sugiyama, M. Furiya, S. Nozaki and H Morisaki
Applied surface science
216/ 1, 382-387
2003



38 一般論文

Heavily carbon doping of GaAs by MOVPE using a newdopant source CBrCl3 and characterization of the epilayers

K. Uchida, S. Bhunia, N. Sugiyama, M. Furiya, M. Katoh, S. Katoh, S. Nozaki, and H. Morisaki
J. Crystal Growth
248, 124-129
2003/03



39 一般論文

Metal organic vapor phase epitaxial growth of heavily carbon-doped GaAs using a dopant source of CCl3 and quantitative analysis of the compensation mechanism in the epilayers
共著
S. Bhunia, K. Uchida, S. Nozaki, N. Sugiyama, M. Furiya, and H. Morisaki
J. Appl. Phys
93/ 3, 1613- 1619
2003/02



40 一般論文

Photoluminescence Studies of GaAs/partially ordered GaInP quantum wells grown by metalorganic vapor phase epitaxy

T. Kobayashi, H. Tomoda, A. D. Prins, Y. Homma, K. Uchida and J. Nakahara
Phisica status solidi (b)
235/ 2, 277-281
2003/01



41 一般論文

Real-time observation of surface morphology at nanometer scale using x-ray specular reflection

T. Kawamura, Y. Watanabe, S. Fujikawa, S. Bhunia, K. Uchida, J. Matsui, Y. Kagoshima, and Y. Tsusaka
Surf. Interface Anal.
35, 72-75
2002



42 一般論文

Real-time observation of surface morphology of indium phosphide MOVPE growth with using X-ray reflectivity technique

T. Kawamura, Y. Watanabe, S. Fujikawa, S. Bhunia, K. Uchida, J. Matsui, Y. Kagoshima, Y. Tsusaka
Journal of Crystal Growth
237-239, 398-402
2002



43 一般論文

A photo-oxidation generated low-k dielectric film deposited by reactive evaporation of SiO

J. J. Si, Y. Show, S. Banerjee, H. Ono, K. Uchida, S. Nozaki and H. Morisaki
Microelectronic Engineering
60, 313-321
2002



44 一般論文

A study of the GaAs/partially ordered GaInP interface
共著
T. Kobayashi, K. Inoue, AD. Prins, K. Uchida and J. Nakahara
SPRINGER PROCEEDINGS IN PHYSICS
87/ 1, 473-474
2001



45 一般論文

Spectroscopic Study of Partially ordered semiconductor Heterojunction under high Pressure and high Magnetic Field.

P. Y. Yu, G. Martinez, J. Zeman and K. Uchida.
J. Raman Spectrosc.
32, 835-
2001



46 一般論文

Correlation between the dielectric constant and porosity of nanoporoous silica thin films deposited by the gas evaporation technique

J. J. Si, H. Ono, K. Uchida, S. Nozaki, H. Morisaki, and N. Ito
Appl. Phys. Lett.
79/ 19, 3140-
2001



47 一般論文

Study on pressure working time and releasing rate for phase transformation of Ge

M. Oh-ishi, S. Akiyama, K. Uchida, S. Nozaki, and H. Morisaki
Phys. Stat. Sol.(b)
223, 391-395
2001



48 一般論文

High Pressure Photoluminescence Study of the GaAs/Partially Ordered GaInP Interface

T. Kobayashi, K. Inoue, A. Prins, K. Uchida and J. Nakahara
Physica Status Solidi B
223, 123-128
2001



49 一般論文

Wurtzite silicon nanocrystals deposited by the cluster-beam evaporation technique

J. Y. Zhang, H. Ono, K. Uchida, S. Nozaki, and H. Morisaki
Phys. Stat. Sol.(b)
223, 41-45
2001



50 一般論文

An analysis of temperature dependent piezoelectric Franz–Keldysh effect in AlGaN
共著
Y. T. Hou, K. Teo, L, M.F. Li, K. Uchida, H. Tokunaga, N. Akutsu and K. Matsumoto
Appl. Phys. Lett.
76/ 8, 1033-1035
2000



51 一般論文

STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER-Influence of short-range ordering on roughness of (AlGa) As interfaces studied with cross-sectional scanning
共著
TCG. Reusch, M. Wenderoth, AJ. Heinrich, KJ. Engel, N. Quaas, K. Sauthoff, RG. Ulbrich, ER. Weber, K. Uchida and W. Wegscheider
Appl. Phys. Lett.
76/ 26, 3882-3884
2000



52 一般論文

High-pressure study of deep emission band at GaAs/partially ordered GaInP interface

Toshihiko Kobayashi, Takashi Ohmae, Toshiyuki Ito, Kazuo Uchida, Jun-ichiro Nakahara
Journal of Luminescence
87-89, 408-410
2000/05



53 一般論文

Short-range ordering in AlxGa1−xAs grown with metal-organic vapor-phase epitaxy
共著
AJ. Heinrich, M. Wenderoth, KJ. Engel, TCG. Reusch, K. Sauthoff, RG. Ulbrich, ER. Weber and K. Uchida
Phys. Rev B
59/ 15, 10296-10301
1999



54 一般論文

Pressure Dependence of Photoluminescence in GaAs/Partially Ordered GaInP Interface

Toshihiko Kobayashi, Takashi Ohmae, Kazuo Uchida and Jun-ichiro Nakahara
Jpn. J. Appl. Phys.
38, 1004-1007
1999



55 一般論文

Temperature dependent of piezoelectric effect in GaN

Y. T. Hou, K. L. Teo, M. F. Li, K. Uchida, H. Tokunaga, N. Akutsu and K.Matsumoto
Appl. Phys. Lett.
76, 1033-1035
1999



56 一般論文

Selective excitation and thermal quenching of the yellow luminescence of GaN

J. S. Colton, P. Y. Yu, K. L. Leo, E. R. Weber, P. Perlin, I. Grzegory and K. Uchida
Appl. Phys. Lett.
75, 3273-3275
1999



57 一般論文

Nanometer size determination of type- II domains in Cu-Pt-ordered GaInP2 with high pressure magneto-luminescence

J. Zeman, S. Jullian, G. Martinez, P.Y.Yu and K. Uchida
Europhys. Lett.
47, 260-266
1999



58 一般論文

GaAs/(ordered)GaInP2 Heterostructures under Pressures and High Magnetic Fields

J. Zeman, G. Martinez, P. Y. Yu, S. K. Kwok and K. Uchida
Physica Status Solidi B
211, 239-246
1999



59 一般論文

Time-Resolved Photoluminescence Study of GaAs/Ordered GaInP Interface under High Pressure

T. Kobayashi, A. Matsui, T. Homae, K. Uchida and J. Nakahara
PhysicaStatus Solidi B
211, 247-253
1999



60 一般論文

自然超格子を有するGaInP/GaAsヘテロ構造におけるホトルミネッセンス・アップコンバージョンの高圧及び高磁場を用いた研究

内田和男,P. Yu,J. Zeman,G. Martinez, 松本功
電子情報通信学会 論文誌,J82-C-II
J82-C II/ 7, 392-397
1999/07



61 一般論文

Pressure Dependence of Photoluminescence in GaAs/Partially Ordered GaInP Interface

Toshihiko Kobayashi, Takashi Ohmae, Kazuo Uchida and Jun-ichiro Nakahara
Jpn. J. Appl. Phys.
38/ Part 1, 2B, 1004-1007
1999/02



62 一般論文

Pressure Dependence of Time-Resolved Photoluminescence in Ordered Ga0. 5In0. 5P
共著
N. Tsuji, K. Takashima, T. Kobayashi, K. Uchida and J. Nakahara
Rev. High Pressure Sci. Technol.
7, 763-772
1998



63 一般論文

High-Pressure Study of Deep Emission Band at GaInP/GaAs Interface
共著
T. Kobayashi, K. Takashsma and K. Uchida
Rev. High Pressure Sci. Technol.
7, 715-717
1998



64 一般論文

Ordering in ternary compound semiconductors studied with cross-sectional scanning tunneling microscopy

A.J.Heinrich, M.Wenderoth, M.A. Rosentreter, K. Engel, M.A. Schneider, R.G. Ulbrich, E.R.Weber , K. Uchida
Appl. Phys. A
66, S959-S962
1998



65 一般論文

Folding of X-point phonos and conduction-band valleys in partially CuPt-ordered Ga0.52In0.48P grown on GaAs

S. H. Kwok, P. Y. Yu. and K. Uchida
Phys. Rev B 58
R13395-13398
1998



66 一般論文

An analysis of temperature dependent photoluminesence line shapes in InGaN

K. Teo, P. Yu, E. Weber, M. Li, K. Uchida and L. Matsumoto
Appl. Phys. Lett. 73
1697-1699
1998



67 一般論文

Electron confinement in(Ordered)GaInP2/GaP/GaAs/(Ordered)GaInP2 single quantum well

J. Zeman, G. Martinez, S. H. Kwok, P. Y. Yu and K. Uchida
Physica B249-251
735-739
1998



68 一般論文

Optical studies of GaInP(ordered)/GaAs and GaInP(ordered)/GaP/GaAs heterostructures

S. H. Kwok, P. Y. Yu. J. Zeman, S. Jullian, G. Martinez and K. Uchida
J. Appl. Phys.
84, 2846-2854
1998



69 一般論文

Phonon-assisted photoliminescence in wurtzite GaN epilayer

W. Liu, M. F. Li, S. J. Xu, Kazuo Uchida and Koh Matsumoto
Semiconductor Science and Technology
13, 769-772
1998/06



70 一般論文

The study of piezoelectric effect in wurtzite GaN/InGaN/AlGaN multilayer structures

Wei Liu, Kie Leong Teo, Ming Fu Li, Soo Jin Chua, Kazuo Uchida, Hiroki Tokunaga, Nakao Akutsu and Koh Matsumoto
Journal of Crystal Growth
189-190, 648-651
1998/06



71 一般論文

GaN exciton photovoltaic spectra at room temperature

W. Liu, M. F. Li and J. Chua, Y. H. Zhang, K. Uchida
Appl. Phys. Lett.
71/ 17, 2511-2513
1997/10



72 一般論文

Band alignments and role of the GaPlayers in the generation of emission from GaInP/GaP/GaAs/GaP/GaInP quantum wells

S. H. Kwok and P. Y. Yu, K. Uchida and T. Arai
APPl. Phys. Lett.
71/ 8, 1110-1112
1997/08



73 一般論文

Band alignment and photoluminescence upconversion at the GaAs/(ordered)GaInP2 heterojunction

J. zeman and G. Martinez, P. Y. Yu, K. Uchdia
Phys. Rev B
55/ 20, R13428-13431
1997/05



74 一般論文

Deep emission band at GaInP/GaAs interface

Kazuo Uchida, Takayuki Arai and Koh Matsumoto
J. Appl. Phys.
81-82, 771-776・3630-3632-
1997/01



75 一般論文

Time resolved photoluminescence study of ordered Ga0.5In0.5P under high pressure

T. Kobayashi, M. Minaki, K. Takashima, K. Uchida and J. Nakahara
Physica Status Solidi B
198, 49-55
1996



76 一般論文

Mechanisms of photoluminescence upconversion at the GaAs/(ordered)GaInP2 interface

Z. P. Su, K. L. Teo, P. Y. YU and K. Uchida
Solid State Commun.
99, 933-936
1996



77 一般論文

Control of defects in GaAs/GaInP interface grown by MOVPE

T. Arai, K. Uchida, H. Tokunaga and K. Matsumoto
Mater. Sci. Forum
196-201, 539-542
1995



78 一般論文

Comparative study of photoluminescence in prdered and disordered GaInP alloys under high pressure

H. Kojima, H. Kayama, T. Kobayashi, K. Uchida and J. Nakahara
J. Phys. Chem. Sol.
56/ 3/4, 345-348
1995



79 一般論文

Comparison between photoluminescence and Raman scattering in disordered and ordered alloys of GalnP

K. Uchida, P. Y. Yu, N. Noto, Z. L-Weber and E. R. Weber
Phil. Mag.
B70, 453-466
1994



80 一般論文

Pressure-induced Γ-X crossover in the conduction band of ordered and disordered Galnp alloys
共著
K. Uchida, P.Y.Yu, N. Noto and E.R.Weber
Appl. Phys. Lett.
64, 2858-2860
1994



81 一般論文

Hydrostatic pressure dependence of Eg-100 meV photoluminescence emissions in n-type AlGaAs

K. Uchida, P. Seguy, H. Wong, P. Souza, P. Y. Yu, E. R. Weber and K. Matsumoto
Jpn. J. App. Phys. 32 Suppl.32-1
32/ 1, 246-248
1993



82 一般論文

Photoluminescence of deep levels induced by sub-ppm H2O in AlGaAs grown by MOCVD

K. Matsumoto and K. Uchida
J. Crystal Growth
115, 484-489
1991



83 一般論文

Anisotropy in the doping characteristics of dimethyl Cadmium in GaAs grown by MOVPE

K. Matsumoto, J. Hidaka and K. Uchida
J. Crystal Growth
99, 329-332
1990



84 一般論文

The effects of growth temperature on the dimethyl-Cd doping of GaAs by MOCVD

K. Matsumoto, J. Hidaka and K. Uchida
J. Appl. Phys.
65, 3849-3851
1989



85 一般論文

MOCVD growth and characterization of GaAs and GaP grown on Si substrates

T. Soga, Y. Kohama, K. Uchida, M. Tajima, T. Jimbo and M. Umeno
,J. Crystal Growth
93, 499-503
1988



86 一般論文

Quality improvement of metal-orgamic chemical vapor deposition grown Gap on Si by AsH3 perflow

Y. Kohama, K. Uchida, T. Soga, T. Jimbo and M. Umeno
Appl. Phys. Lett.
53, 862-864
1988



87 招待論文

Photoluminescence of Si nanocrystals formed by the photosysnthesis

S. Nozaki, C.Y.Chen, S.Kimura, H. Ono and K. Uchida
Thin Solid Films
517/ 1, 50-54
2008



88 招待論文

Photo-modification and synthesus of semiconductor nanocrystals

S. Nozaki, C.Y. Chen, H. Ono and K. Uchida
Surface Science
601, 2549-2554
2007



89 国際会議プロシーディングス等

Effects of Electrical Stress and High-Energy Electron Irradiation on the InGaP/GaAs Heterojunction Phototransistor
共著
P. H. Than, K. Uchida, T. Makino, T. Ohshima, S. Nozaki
Mat. Res. Soc. Symp. Proc.
1792-
2015



90 国際会議プロシーディングス等

New Task and Ambient Lighting System with Dual Light Distributions
共著
Kazuo Uchida and Goro Terumichi
ICBEST2015
ICBEST2015, ICBEST2015-
2015/08/31



91 国際会議プロシーディングス等

Intense ultraviolet photoluminescence observed at room temperature from NiO nanoporous thin films grown by the hydrothermal technique
共著
Sachindra Nath Sarangi, Dongyuan Zhang, Kumar Sahoo, Kazuo Uchida Surendra Nath Sahu and Shinji Nozaki
Mat. Res. Soc. Symp. Proc.
1494
2013



92 国際会議プロシーディングス等

Fabrication of a p-NiO/n-Si heterojunction diode by UV oxidation of Ni deposited on n-Si
共著
Dongyuan Zhang, Kazuo Uchida and Shinji Nozaki
Mat. Res. Soc. Symp. Proc.
1494-
2013



93 国際会議プロシーディングス等

Effect of O2/Ni ratio on structure and surface morphology of atmospheric pressure MOCVD grown NiO thin films
共著
Teuku M. Roffi, Motohiko Nakamura, Kazuo Uchida and Shinji Nozaki
Mat. Res. Soc. Symp. Proc.
1494-
2013



94 国際会議プロシーディングス等

Improvement of high-power-white-LED lamp performance by liquid injection
共著
Roffi, T. M., Idris, I., Uchida, K., Nozaki, S., Sugiyama, N., Morisaki, H., & Soelami, F. X.

1-6
2011



95 国際会議プロシーディングス等

Defects in an electron-irradiated 6H-SiC diode studied by alpha particle induced charge transient spectroscopy
共著
N. Iwamoto, S. Onoda, T. Makino, T. Ohshima, K. Kojima, S. Koike, A. Koizumi, K. Uchida and S. Nozaki
The 2011 International Conference on Silicon Carbide and Related Materials (ICSCRM 2011)
Tu-P-66
2011



96 国際会議プロシーディングス等

Compensation-dependent carrier transport of Al-doped p-type 4H-SiC
共著
A. Koizumi, N. Iwamoto, S. Onoda, T. Ohshima, T. Kimoto, K. Uchida and S. Nozaki
Abstract of ECSCRM8th
TP-230
2010



97 国際会議プロシーディングス等

Comparative Study on Reliability of InP/InGaAs Heterojunction Bipolar Transistors with Highly Zn-and C-Doped Base Layers
共著
Koizumi, Atsushi, Kazuki Oshitanai, Jaesung Lee, Kazuo Uchida, and Shinji Nozaki
MRS Proceedings
1195
2009



98 国際会議プロシーディングス等

InGaP/GaAs heterointerfaces studied by cross-sectional scanning tunneling microscopy and their impact on the device characteristics
共著
S. Nozaki, A. Koizumi, K. Uchida and H. Ono
Proceedings of the International Conference Nanomeeting-2009: Physics, Chemistry and Application of Nanostructures
18-23
2009



99 国際会議プロシーディングス等

Growth and optical properties of SnO2 ultra-small nanorods by the novel micelle technique

S. Rath, S. Nozaki, H. Ono, K. Uchida and S. Kojima
Materials Research Society Mat. Res. Soc. Symp. Proc.
1087, 29-
2008



100 国際会議プロシーディングス等

Mechanically strong ultralow-K nanoporous silica made of SiOx nanoparticles

S. Nozaki, H. Ono and K. Uchida
Proceedings of Advance Metallization Conference 2006
413-417
2007



101 国際会議プロシーディングス等

Low-temperature formation of high-quality SiOx thin films by evaporation of SiO nanopowder
共著
S. Nozaki, S. Kimura, H. Ono and K. Uchida
The 13th International Workshop on Active-Matrix Flatpanel Displays and Devices (Digest of Technical Papers)
19-22
2006



102 国際会議プロシーディングス等

Low Temperature Photoluminescence Of GaAs/GaInP Heterostructures Measured Under Hydrostatic Pressure
共著
Kobayashi, Toshihiko, Atsushi Nagata, Andrew D. Prins, Yasuhiro Homma, Kazuo Uchida, and Jun‐ichiro Nakahara
PHYSICS OF SEMICONDUCTORS
772/ 1, 931-932
2005



103 国際会議プロシーディングス等

Material Issues in high-frequency GaInP/GaAs heterojunction bipolar transistors

Shinji Nozaki, Hiroshi Ono, Kazuo Uchida and Hiroshi Morisaki
Proceedings of the XIII International Workshop on Physics of Semiconductor Devices, vol. II
741-747
2005/12



104 国際会議プロシーディングス等

Self-limiting photo-assisted synthesis of silicon nanocrystals

C. Y. Chen, S. Kimura, S.Sen, S. Nozaki, H. Ono, K. Uchida, and H. Morisaki
Mat. Res. Soc. Symp. Procs.
832, F10.21.1-F10.21.6
2004



105 国際会議プロシーディングス等

Self-limiting photo-assited synthesis of silicon nanocrystals

C. Y. Chen, S. Kimura, S.Sen, S. Nozaki, H. Ono, K. Uchida, and H. Morisaki
Proc. of Materias Research Society Fall Meeting
F10.21.1 - F10.21.6-
2004/12



106 国際会議プロシーディングス等

Capacitance-voltage hysteresis in the metal-oxide-semiconductor with Si nanocrystals deposited by the gas evaporation technique

P.Mishra, S. Nozaki, R. Sakura, H. Morisaki, H. Ono, K.Uchida
Materials Research Symposium Proceedings
686, A.5.4.1-
2002



107 国際会議プロシーディングス等

Ultralow K nanoporous silica by oxidation of silicon nanocrystals

S. Nozaki, H. Ono, K. Uchida, H. Morisaki, N. Ito and M. Yoshimaru
Proceedings of 2002 International Interconnect Technology Conference
69 - 71
2002/06



108 国際会議プロシーディングス等

Real-time observation of step-flow limited metal organic vapor phase epitaxy growth of InP and their characteristics

S.Bhunia, T. Kawamura, Y. Watanabe, S. Fujikawa, K. Uchida, S. Nozaki, H. Morisaki, J. Matsui, Y. Kagoshima, Y. Tsusaka
Inst. Phys. Conf. Ser, 28th Int. Symp. Compound Semiconductors
170, 647-652
2001/10



109 国際会議プロシーディングス等

In-situ study of growth mode by reflection of synchrotron x-ray during the metal organic vapor phase epitaxial growth of InP(共著)

S. Bhunia, K. Uchida, S. Nozaki, H. Morisaki, T. Kawamura, Y. Watanabe, S. Fujikawa, J. Matsui, Y. Kagoshima, and Y. Tsusaka
International Conference on Crystal Growth - 13 in Conjunction with Vapor Growth and Epitaxy - 11, Kyoto, Japan, July 30 -
Aug. 4.
?
2001/07



110 国際会議プロシーディングス等

Formation of Ge nanocrystals passivated with Si by gas evaporation of Si and Ge

J. J. Si, H. Ono, K. Uchida, S. Nozaki, and H. Morisaki

638, F14.4.1-
2000/11



111 国際会議プロシーディングス等

Ultra low K SiO_2_ thin films with nano-voids by gas-evaporation technique

S. Nozaki, S. Banerjee, K. Uchida, H. Ono, and H. Morisaki

140-142
2000/06



112 国際会議プロシーディングス等

Piezoelectric Franz-Keldysh effect in a GaN/InGaN/AlGaN multilayer structure

Hou, Yong T., Kie L. Teo, Ming Fu Li, Kazuo Uchida, Hiroki Tokunaga, Nakao Akutsu, and Koh Matsumoto
International Symposium on Photonics and Applications
46-53
1999



113 国際会議プロシーディングス等

Phonon-assisted photoluminescence in wurtzite GaN epilayer
共著
Liu, Wei, Ming Fu Li, ShiJie Xu, Kazuo Uchida, and Koh Matsumoto
Proc. SPIE
3419, 311905-
1998



114 国際会議プロシーディングス等

A study of band alignment in GaAs/GaInP(Partially ordered)heterostructureswith high pressure

K. Uchida, P. Yu, J. Zeman, S. Kwon, K. Teo, Z. Su, G. Martinez, T. Arai and K. Matsumoto

381-392
1998



115 国際会議プロシーディングス等

High pressure studies of quantum well emission and deep emission in GaInP(ordered)-GaAs heterostructures

S. Kowk, P. Yu, K. Uchida, and T. Arai

195-200
1998



116 国際会議プロシーディングス等

GaN room temperature exciton spectra by photovoltaic measurement

W. Liu, M. F. Li, S. J. Chua, Y. H. Zhang and K. Uchida

593-598
1998



117 国際会議プロシーディングス等

Investigation of Phonon-assisted Photoluminescence in Wurtzite GaN Epilayer

Wei Liu, M. F. Li, Shi-Jie Xu, Kazuo Uchida, Koh Matsumoto
Proc of the SPIE Confenrence on Optelectronic Materials and Devices
3419, 27-34
1998/07



118 国際会議プロシーディングス等

III-V nitrides growth by atmospheric-pressure MOVPE with a three layered flow channel

Kazuo Uchida, Hiroki Tokunaga, Yoshiaki Inaishi Nakao Akutsu and Koh Matsumoto

449, 129-134
1997/03



119 国際会議プロシーディングス等

Raman and photoluminescence studies on atmospheric pressure MOVPE grown GaN on sapphire substrates

T. Suski, J. Krueger, C. Kisielowski, E. Weber, K. Uchida, H. Tokunaga, N. Akutsu and K. Matsumoto

20
1996



120 国際会議プロシーディングス等

The formation of radiative defects at GaAs/GaInP interface

K. Uchida, T. Arai and K. Matsumoto

417, 319-324
1996



121 国際会議プロシーディングス等

Upconversion of near GaAs bandgap photons to GaInP2 emission at the GaAs/(ordered) GaInP2 heterointerface

K. L. Teo, Z. P. Su, and P. Y.YU, K. Uchida

489-492
1996



122 国際会議プロシーディングス等

Magnetic field dependence of up-converted photoluminescence in partially ordered GaInP2/GaAs up to 23 T

J. zeman and G. Martinez, P. Y. Yu, K. Uchdia

493-496
1996



123 国際会議プロシーディングス等

Raman spectroscopy study on order-disordered Ga0.52In0.48P on GaAs grown by MOVPE

K. Uchida, P. Y. Yu, E. R.Weber and N. Noto

261-264
1995



124 国際会議プロシーディングス等

ENERGY OF X CONDUCTION BAND MINIMA IN DISORDERED AND ORDERED GaInP2 ALLOYS

K. Uchida, P.Y. YU, N. Noto and E. R. Weber
Proc. of the 22nd ICPS
177-180
1994/08



125 国際会議プロシーディングス等

High quality Gap growth on Si sudstrates by MOCVD

K. Uchida, Y. Kohama, M. Tajima. T. Soga, T. Jimbo and M. Umeno

116, 319-322
1988