Published papers
Number of published data : 142
No. Classification Refereed paper Title Authorship Author Journal Volume/issue/page Publication date ISSN DOI URL
1 Paper
Yes
Ab initio study of hydrogen storage on metal-decorated GeC monolayers
Joint
L.G. Arellano, F. De Santiago, A. Miranda, L.A. Perez, F. Salazar, A. Trejo, J. Nakamura, and M. Cruz-Irisson
Int. J. Hydrogen Energy
46, 29261-29271
2021/05/17

10.1016/j.ijhydene.2021.04.135

2 Paper
Yes
Edge-State-Induced Stacking of Zigzag Graphene Nanoribbons
Joint
T.Asano and J.Nakamura
ACS Omega
4, 22035-22040
2019/12/09

10.1021/acsomega.9b03138

3 Paper
Yes
Fe azaphthalocyanine unimolecular layers (Fe AzULs) on carbon nanotubes for realizing highly active oxygen reduction reaction (ORR) catalytic electrode
Joint
H.Abe, Y.Hirai, S.Ikeda, Y.Matsuo, H.Matsuyama, J.Nakamura, T.Matsue, and H.Yabu
NPG Asia Materials
11, 57 (1)-57 (12)
2019/10/18

10.1038/s41427-019-0154-6

4 Paper
Yes
Oxygen reduction reaction mechanism of N-doped graphene nanoribbons
Joint
Haruyuki Matsuyamaa, Shun-ichi Gomi, and Jun Nakamura
Journal of Vacuum Science and Technology B
37, 041803-1-041803-7
2019/07/17

10.1116/1.5100535

5 Paper
Yes
Effect of Water on the Manifestation of the Reaction Selectivity of Nitrogen-Doped Graphene Nanoclusters toward Oxygen Reduction Reaction
Joint
Haruyuki Matsuyama, Akira Akaishi, and Jun Nakamura
ACS Omega
4, 3832-3838
2019/02/21

10.1021/acsomega.9b00015

6 Paper
Yes
Atomic structure and passivated nature of the Se-treated GaAs(111)B surface
Joint
A. Ohtake, S. Goto, and J. Nakamura
Sci. Rep.
8, 1220-1-1220-8
2018/01/19

10.1038/s41598-018-19560-2

7 Paper
Yes
Structural stability and aromaticity of pristine and doped graphene nanoflakes
Joint
A.Akaishi, M.Ushirozako, H.Matsuyama, and J. Nakamura
Jpn. J. Appl. Phys.
57/ 1, 0102BA-1-0102BA-7
2017/11/21

doi.org/10.7567/JJAP.57.0102BA
URL
8 Paper
Yes
Formation of Water Layers on Graphene Surfaces
Joint
A.Akaishi, T.Yonemaru, and J.Nakamura
ACS Omega
2, 2184-2190
2017/05/18

10.1021/acsomega.7b00365

9 Paper
Yes
Mechanism of stabilization and magnetization of impurity-doped zigzag graphene nanoribbons
Joint
Y.Uchida, S.-I.Gomi, H.Matsuyama, A.Akaishi, and J.Nakamura
Journal of Applied Physics
120, 214301-1-214301-7
2016/12/03

10.1063/1.4971175
URL
10 Paper
Yes
First-principles study of locally disordered structures of Mn-induced GaAs(001)-(2x2) surface
Joint
A.Akaishi, K.Funatsuki, A.Ohtake, and J. Nakamura
Jpn. J. Appl. Phys.
55, 08NB21-1-08NB21-4
2016/07/19

doi.org/10.7567/JJAP.55.08NB21
URL
11 Paper
Yes
Mn-Induced Surface Reconstructions on GaAs(001)
Joint
Akihiro Ohtake, Atsushi Hagiwara, Kazuya Okukita, Kenta Funatsuki, and Jun Nakamura
The Journal of Physical Chemistry C
120/ 11, 6050-6062
2016/03/10

10.1021/acs.jpcc.5b12309

12 Paper
Yes
Anomalous Stabilization in Nitrogen-Doped Graphene
Joint
Tsuguto Umeki, Akira Akaishi, Akihide Ichikawa, and Jun Nakamura
The Journal of Physical Chemistry C
119/ 11, 6288-6292
2015/03/03

10.1021/jp511938r

13 Paper
Yes
Self-assembled growth of Ga droplets on GaAs(001): Role of surface reconstruction
Joint
A.Ohtake, T.Mano, A.Hagiwara, and J.Nakamura
Crystal Growth & Design
14, 3110-3115
2014/06/06

10.1021/cg500355f

14 Paper
Yes
Origin of symmetric STM images for the asymmetric atomic configuration on GaAs(001)-c(4x4)a surfaces
Joint
S. Kaku, J. Nakamura, K. Yagyu, and J. Yoshino
Surface Science
625, 84-89
2014/03/19

10.1016/j.susc2014.03.014

15 Paper
Yes
Giant Seebeck coefficient of the graphene/h-BN superlattices

Y. Yokomizo and J. Nakamura
Applied Physics Letters
103, 113901 (1-4)
2013/09



16 Paper
Yes
Ballistic phonon thermal conductance in graphene nano-ribbons

Hiroki Tomita and Jun Nakamura
J.Vac.Sci.Technol. B
31, 04D104 (1-7)
2013/05



17 Paper
Yes
Controlled incorporation of Mn in GaAs: Role of surface reconstructions

A. Ohtake, A. Hagiwara, and J. Nakamura
Physical Review B
87, 165301 (1-5)
2013/04



18 Paper
No
教育の質保証評価ツールとしてのカリキュラムマップ

桑田正行、安藤芳晃、西一樹、中村淳、田中勝己
電気通信大学紀要
25/ 1, 41-50
2013/02



19 Paper
Yes
Magnetic properties of a single molecular layer of MnAs on GaAs(110)

M. Hirayama, A. Natori, and J. Nakamura
Physical Review B
87, 075428 (1-6)
2013/02



20 Paper
Yes
First-principles calculations of the dielectric constant for the GeO2 films

M.Tamura, J.Nakamura, and A.Natori
Key Eng. Mat.
470, 60-65
2011/02



21 Paper
Yes
D- centers in uniaxially stressed Si and in Si/SiO2 quantum wells

T.Chiba, J.Nakamura, and A.Natori
Physical Review B
82, 195201 (1-9)
2010/10



22 Paper
Yes
Structural and electronic properties of carbon nano-cylinder consisting of nanoribbon-walls with arrayed-oxygen hinges

Y.Fujii, A.Natori, and J.Nakamura
Journal of Vacuum Science and Technology B
28, C5C8 (1-4)
2010/07



23 Paper
Yes
Conductivity and dielectric constant of nanotube/polymer composites

Y.Hazama, N.Ainoya, J.Nakamura, and A.Natori
Physical Review B
82, 045204 (1-8)
2010/07



24 Paper
Yes
The anisotropy of ac conductivity and dielectric constant of anisotropic conductor–insulator composites

Yuichi Hazama, Jun Nakamura, and Akiko Natori
J. Mater. Sci.
45, 2843-2851
2010/02



25 Paper
Yes
Variable stoichiometry in Sb-induced (2×4) reconstructions on GaAs(001)

A.Ohtake, M.Hirayama, J.Nakamura, and A.Natori
Physical Review B
80, 235329 (1-9)
2009/12



26 Paper
Yes
Control mechanism of friction by dynamic actuation of nanometer-sized contacts

H.Iizuka, J.Nakamura, and A.Natori
Physical Review B
80, 155449 (1-8)
2009/10



27 Paper
Yes
Ballistic thermal conductance of electrons in graphene ribbons

Eiji Watanabe, Sho Yamaguchi, Jun Nakamura, and Akiko Natori
Physical Review B
80, 085404 (1-6)
2009/08



28 Paper
Yes
Anisotropic half-metallic ground state of Mn atomic wire on GaAs(110)

Motoi Hirayama, Akiko Natori, and Jun Nakamura
Journal of Vacuum Science and Technology B
27, 2062-2065
2009/07



29 Paper
Yes
In-plane strain effects on dielectric properties of the HfO2 thin film

Sadakazu Wakui, Jun Nakamura, and Akiko Natori
Journal of Vacuum Science and Technology B
27, 2020-2023
2009/07



30 Paper
Yes
Structural and electronic properties of the planar C-skeleton polymers

Jun Nakamura, Nariaki Arimura, Motoi Hirayama, and Akiko Natori
Applied Physics Letters
94, 223107 (1-3)
2009/06



31 Paper
Yes
Band-bening effects on scanning tunneling microscope images of subsurface dopants: First-principles calculations

M.Hirayama, J.Nakamura, and A.Natori
Journal of Applied Physics
105, 083720 (1-4)
2009/04



32 Paper
Yes
Negative donors in bulk Si and Si/SiO2 quantum wells in a magnetic field

J.I.Inoue, T.Chiba, A.Natori, and J.Nakamura
Physical Review B
79, 035206 (1-8)
2009/01



33 Paper
Yes
Size effects in friction of multiatomic sliding contacts

Masanori Igarashi, Akiko Natori, Jun Nakamura
Physical Review B
78, 165427 (1-10)
2008/10



34 Paper
Yes
Atomic scale dielectric constant near the SiO2/Si(001) interface

Sadakazu Wakui, Jun Nakamura, and Akiko Natori
Journal Vacuum Science and Technology B
26, 1579-1584
2008/08



35 Paper
Yes
Semiconducting nature of the oxygen-adsorbed graphene sheet

Jun Ito, Jun Nakamura, Akiko Natori
Journal of Applied Physics
103, 113712 (1-5)
2008/06



36 Paper
Yes
Structural bistability of the oxygen-adsorbed graphene sheet

J.Nakamura, J.Ito, and A.Natori
J.Phys.: Conf. Ser.
100, 052019 (1-4)
2008/04



37 Paper
Yes
Negative donors in multivalley semiconductors: Diffusion quantum Monte Carlo simulations

Jun-ichi Inoue, Jun Nakamura, and Akiko Natori
Physical Review B
77, 125213 (1-5)
2008/03



38 Paper
Yes
Ballistic thermal conductance of a graphene sheet

K.Saito, J.Nakamura, and A.Natori
Physical Review B
76, 115409-1 - 115409-4-
2007/09



39 Paper
Yes
Simulations of scanning tunneling microscopy for B-/P-doped Si(111) surfaces

Motoi Hirayama, Jun Nakamura, and Akiko Natori
Japanese Journal of Applied Physics (JJAP)
46, 5643-5646
2007/08



40 Paper
Yes
Mechanism of velocity saturation of atomic friction force and dynamic superlubricity at torsional resonance

Masanori Igarashi, Jun Nakamura, and Akiko Natori
Japanese Journal of Applied Physics (JJAP)
46, 5591-5594
2007/08



41 Paper
Yes
Dielectric properties of the interface between Si and SiO2

Sadakazu Wakui, Jun Nakamura, and Akiko Natori
Japanese Journal of Applied Physics (JJAP)
46, 3261-3264
2007/05



42 Paper
Yes
First-principles evaluations of dielectric constants for ultra-thin semiconducting films

J.Nakamura and A.Natori
Surface Science
600, 4332-4336
2006/10



43 Paper
Yes
ac conductivity and dielectric constant of conductor-insulator composites

T.B.Murtanto, S.Natori, J.Nakamura, and A.Natori
Physical Review B
74, 115206-1 - 115206-7-
2006/09



44 Paper
Yes
Charge correlation and spin coupling in double quantum dots: A quantum diffusion Monte Carlo study

Hyuga Masu, Taichii Yamada, Jun Nakamura, and Akiko Natori
Physical Review B
74, 075312-1 - 075312-8-
2006/08



45 Paper
Yes
Dielectric discontinuity at structural boundaries in Si

Jun Nakamura and Akiko Natori
Applied Physics Letters
89, 053118-1 - 053118-3-
2006/08



46 Paper
Yes
First-principles calculations of dielectric constants for ultrathin SiO2 films

Sadakazu Wakui, Jun Nakamura, and Akiko Natori
Journal of Vacuum Science and Technology B
24, 1992-1996
2006/07



47 Paper
Yes
Structural stabilities and electronic properties of planar Si compounds

M.Hirayama, J.Nakamura, and A.Natori
e-Journal of Surface Science and Nanotechnology
4, 528-533
2006/06



48 Paper
Yes
Errutum: Double-slip mechanism in atomic-scale friction: Tomlinson model at finite temperatures

J.Nakamura, S.Wakunami, and A.Natori
Physical Review B
73, 169901-1
2006/04



49 Paper
Yes
Dielectric properties of hydrogen-terminated Si(111) ultrathin films

J.Nakamura, S.Ishihara, A.Natori, T.Shimizu, and K.Natori
Journal of Applied Physics
99, 054309-1 - 054309-5-
2006/03



50 Paper
Yes
Double-slip mechanism in atomic-scale friction: Tomlinson model at finite temperatures

J.Nakamura, S.Wakunami, and A.Natori
Physical Review B
72, 235415-1 - 235415-6-
2005/12



51 Paper
Yes
Electronic and magnetic properties of BNC ribbons

Jun Nakamura, Toshihiro Nitta, and Akiko Natori
Physical Review B
72, 205429-1 - 205429-5-
2005/11



52 Paper
Yes
Structural stabilitty of Si(001) and Ge(001) in External Electric Fields

J.Nakamura and A.Natori
Japanese Journal of Applied Physics (JJAP)
44/ 7B, 5413-5416
2005/07



53 Paper
Yes
半導体超薄膜の誘電特性

中村淳、名取晃子
表面科学
26/ 7, 392-397
2005/07



54 Paper
No
若手・女性研究者の研究環境

中村淳,伊賀健一
学術の動向
10/ 4, 33-36
2005/04



55 Paper
Yes
Energy barrier for dimer flipping at the Si(001)-(2x1) surface in external electric field

J.Nakamura and A.Natori
Physical Review B
71, 113303-1 - 113303-4-
2005/03



56 Paper
Yes
Ge/Si(113)-(2x2) surfaces: structural features induced by self-interstitial atoms

Z.H.Zhang, K.Sumitomo, and J.Nakamura
Wuli
33, 708-712
2004/10



57 Paper
Yes
Ga-As dimer structure for the GaAs(001)-c(4x4) surface

A.Ohtake, J.Nakamura, N.Koguchi, and A.Natori
Surface Science
566-568, 58-62
2004/09



58 Paper
Yes
Atomic scale friction of nanoscale clusters

K.Ohno, T.Nitta, J.Nakamura, and A.Natori
Journal of Vacuum Science and Technology B
22, 2026- 2029
2004/08



59 Paper
Yes
Kinetics in surface reconstructions on GaAs(001)

A.Ohtake, P.Kocan, J.Nakamura, A.Natori, and N.Koguchi
Physical Review Letters
92, 236105-1 - 236105-4-
2004/06



60 Paper
Yes
Direct observation of Au deposition processes on the InSb{111}A,B-(2x2) surfaces

S.P.Cho, J.Nakamura, N.Tanaka, and T.Osaka
Nanotechnology
15, S371-S375
2004/04



61 Paper
Yes
First-principles study on the atomic and electronic structures of the Au/Si(111)-alpha(Sqrt3xSqrt3)R30 surface

T.Kadohira, J.Nakamura, and S.Watanabe
e-Journal of Surface Science and Nanotechnology
2, 146-150
2004/04



62 Paper
Yes
Band discontinuity at ultrathin SiO2/Si(001) interfaces

Masatoshi Watarai, Jun Nakamura, Akiko Natori
Physical Review B
69, 035312-1 - 035312-6-
2004/01



63 Paper
Yes
極薄SiO2/Si界面のエネルギー障壁の第一原理計算

渡会雅敏、中村淳、名取晃子
表面科学
24/ 9, 550-555
2003/09



64 Paper
Yes
Ge/Si(113)-2x2表面の構造安定性と応力異方性

中村淳 、張朝暉、住友弘二、尾身博雄、荻野俊郎、名取晃子
表面科学
24/ 9, 526-530
2003/09



65 Paper
Yes
Structural stability of the Ge /Si(113)-2 x 2 surface

J.Nakamura, Z.Zhang, K.Sumitomo, H.Omi, T.Ogino, and A.Natori
Applied Surface Science
212-213, 724-729
2003/05



66 Paper
Yes
Dynamics of c(4x2) phase-transition in Si(100) surfaces

A.Natori, M.Osanai, J.Nakamura, and H.Yasunaga
Applied Surface Science
212-213, 705-510
2003/05



67 Paper
Yes
Au/InSb(111)A系における合金形成過程

趙星彪、原尚子、成瀬延康、門平卓也、中村淳、大坂敏明
表面科学
24/ 2, 111-117
2003/02



68 Paper
Yes
New structure model for the GaAs(001)-c(4x4) surface

A.Ohtake, J.Nakamura, S.Tsukamoto, N.Koguchi, and A.Natori
Physical Review Letters
89, 206102-1 - 206102-4-
2002/10



69 Paper
Yes
Atomic structures of the Ge/Si(113)-(2x2) surface

Zhaohui Zhang, Koji Sumitomo, Hiroo Omi, Toshio Ogino, Jun Nakamura, Akiko Natori
Physical Review Letters
88, 256101-1 - 256101-4-
2002/06



70 Paper
Yes
Structural and electronic properties of two-dimensional C60

Jun Nakamura, Tomonobu Nakayama, Satoshi Watanabe, and Masakazu Aono
Trans.Mat.Res.Soc.Jpn.
26, 1167-1170
2001



71 Paper
Yes
Electronic states and structural stability of gold nanowires

Jun Nakamura, Nobuhiko Kobayashi, and Masakazu Aono
RIKEN Review
37, 17-20
2001



72 Paper
Yes
Structural stability and electronic states of gold nanowires

Jun Nakamura, Nobuhiko Kobayashi, Satoshi Watanabe, and Masakazu Aono
Surface Science
482-485, 1266-1271
2001



73 Paper
Yes
Theoretical study on the structural phase transition of Si(111)-Sqrt3xSqrt3-Ag surface

Yoshimichi Nakamura, Yuki Kondo, Jun Nakamura, and Satoshi Watanabe
Surface Science
493, 206-213
2001



74 Paper
Yes
Wurtzite-zincblende polytypism in ZnSe on GaAs(111)

Akihiro Ohtake, Jun Nakamura, Masami Terauchi, Futami Sato, Michiyoshi Tanaka, Kozo Kimura, and Takafumi Yao
Physical Review B
63, 195325-1-195325-4-
2001



75 Paper
Yes
Anisotropic electronic structure of the Si(111)-(4x1)In surface

Jun Nakamura, Satoshi Watanabe, and Masakazu Aono
Physical Review B
63, 193307-1-193307-4-
2001



76 Paper
Yes
Surface structures of GaAs{111}A,B-(2x2)

Akihiro Ohtake, Jun Nakamura, Takuji Komura, Takashi Hanada, Takafumi Yao, Hiromi Kuramochi, and Masashi Ozeki
Physical Review B
64, 0453181-0453188
2001



77 Paper
Yes
Structural and cohesive properties of a C60 monolayer

Jun Nakamura, Tomonobu Nakayama, Satoshi Watanabe, and Masakazu Aono
Physical Review Letters
87, 0483011-0483014
2001



78 Paper
Yes
STM images apparently corresponding to a stable structure: Considerable fluctuation of a phase boundary of the Si(111)Sqrt3xSqrt3-Ag surface

Yoshimichi Nakamura, Yuki Kondo, Jun Nakamura, and Satoshi Watanabe
Physical Review Letters
87, 156102-1-156102-4-
2001



79 Paper
Yes
Atomic and electronic structure of the Si(111)-Sqrt(3)×Sqrt(3)-Ag surface re-examined by using first-principles calculation

S.Watanabe, Y.Kondo, Y.Nakamura, J.Nakamura
Sci. Tech. Adv. Mat.
1, 167-172
2000



80 Paper
Yes
Study of Diffusion and Defects by Medium-Energy Coaxial Impact-Collision Ion Scattering Spectroscopy

T.Kobayashi, C.F.McConville, J.Nakamura, G.Dorenbos, H.Sone, T.Katayama, M.Aono
Defect and Diffusion Forum
183-185, 207-214
2000



81 Paper
Yes
Strain relaxation in InAs/GaAs(111) A heteroepitaxy

A.Ohtake, M.Ozeki, J.Nakamura
Physical Review Letters
84, 4665-4668
2000



82 Paper
Yes
Structure and electronic states for a single strand of gold atoms

J.Nakamura and M.Aono
RIKEN Review
25, 34-36
1999



83 Paper
Yes
Photoinduced products in a C60 monolayer on Si(111)-Sqrt3xSqrt3-Ag: An STM study

T.Nakayama, J.Onoe, K.Nakatsuji, J.Nakamura, K.Takeuchi, and M.Aono
Surface Review and Letters
6, 1073-1078
1999



84 Paper
Yes
Reflection high-energy electron diffraction analysis of the InSb{111}A,B-(2x2) surfaces

A.Ohtake and J.Nakamura
Surface Science
396, 394-399
1998



85 Paper
Yes
Structure and Electronic States of the Alpha-Sn(111)-(2x2) Surface

T.Eguchi, J.Nakamura, and T.Osaka
Journal of Physical Society of Japan
67, 381-384
1998



86 Paper
Yes
Structure of the InSb(111)A-(2Sqrt[3]x2Sqrt[3])-R30 surface and its dynamical formation processes

M.Nishizawa, T.Eguchi, T.Misima, J.Nakamura, and T.Osaka
Physical Review B
57, 6317-6320
1998



87 Paper
Yes
Direct imaging of the evolving Au/InSb(111)B interface

T.Mishima, J.Nakamura, K.Tsukada, M.Nishizawa, T.Eguchi, and T.Osaka
Journal of Vacuum Science and Technology B
16, 2324-2327
1998



88 Paper
Yes
Chemical bonding features for faultily stacked interfaces of GaAs{111}

J.Nakamura, T.Mishima, M.-H.Masui, M.Sawayanagi, S.-H.Cho, M.Nishizawa, T.Eguchi, and T.Osaka
Journal of Vacuum Science and Technology B
16, 2426-2431
1998



89 Paper
Yes
Surfactant induced bond strengthening in as-grown film surfaces

J.Nakamura, H.Konogi, and T.Osaka
Bulletin of the Centre for Informatics, Waseda University
21, 12-20
1997



90 Paper
Yes
Structural stability and its electronic origin of the GaAs(111)A-2x2 surface

J.Nakamura, H.Nakajima, and T.Osaka
Applied Surface Science
121/122, 249-252
1997



91 Paper
Yes
Initial growth processes of Ag on polar and non-polar semiconductor substrates

A.Ohtake, J.Nakamura, and T.Osaka
Surface Science Letters
380, L437-L440
1997



92 Paper
Yes
s-character of MX4 (M=C, Si, Ge, X=F, Cl, Br, I) molecules

J.Nakamura, H.Konogi, H.Sato, and T.Osaka
Journal of Physical Society of Japan
66, 1656-1659
1997



93 Paper
Yes
Nucleation of Au on KCl(001)

J.Nakamura, T.Kagawa, and T.Osaka
Surface Science
389, 109-115
1997



94 Paper
Yes
Charge transfer mechanism in the incommensurately grown monolayer graphite on the Si terminated SiC(111) surfaces

J.Nakamura, H.Konogi, and T.Osaka
Bulletin of the Centre for Informatics, Waseda University
19, 48-54
1996



95 Paper
Yes
The initial adsorption processes of Au on the terrace and step of a KCl(001) surface

J.Nakamura, T.Kagawa, H.Hayashi, and T.Osaka
Bulletin of the Centre for Informatics, Waseda University
19, 33-40
1996



96 Paper
Yes
Surfactant-induced bond strengthening in as-grown film surfaces

J.Nakamura, H.Konogi, and T.Osaka
Japanese Journal of Applied Physics
35, L441-L443
1996



97 Paper
Yes
Geometry and lattice formation of surface layers of Sn growing on InSb{111}A,B

A.Ohtake, J.Nakamura, T.Eguchi, and T.Osaka
Physical Review B
54, 10358-10361
1996



98 Paper
Yes
Inhomogeneous charge transfer in an incommensurate system

J.Nakamura, H.Konogi, and T.Osaka
Physical Review B
51, 5433-5436
1995



99 Paper
Yes
Molecular dynamics simulations of the initial stages of Si on Si(001)-2x1

K.Nakamura, J.Nakamura, T.Kagawa, and T.Osaka
Bulletin of the Centre for Informatics, Waseda University
16, 17-25
1994



100 Invited paper
Yes
the Dielectric Constant Near the Si/oxide Interface: A First-Principles Approach

Jun Nakamura, Sadakazu Wakui, Shunsuke Eguchi, Ryosuke Yanai, and Akiko Natori
ECS Trans.
11, 173-182
2007/10



101 International conference proceedings, etc.
Yes
Softly-confined water cluster between freestanding graphene sheets
Joint
R.Agustian, A.Akaishi, and J.Nakamura
AIP Conference Proceedings
1929, 020006-1-020006-5
2018/01/25

10.1063/1.5021919

102 International conference proceedings, etc.
Yes
Reaction Selectivity for Oxygen Reduction of N-Doped Graphene Nanoclusters
Joint
H.Matsuyama, A.Akaishi, and J.Nakamura
ECS Trans.
80/ 8, 685-690
2017

10.1149/08008.0685ecst

103 International conference proceedings, etc.
Yes
Ballistic phonon thermal conductance in graphene nano-ribbon: First-principles calculations

J.Nakamura, and H.Tomita
AIP Conf. Proc.
1566, 139-140
2013/12



104 International conference proceedings, etc.
Yes
Dielectric properties of GeO2 ultrathin films

M.Tamura, S.Wakui, J.Nakamura, and A.Natori
37th Conference on the Physics and Chemistry of Surfaces and Interfaces
We1740-
2010/01



105 International conference proceedings, etc.
Yes
Structural and electronic properties of carbon nanocylinder consisting of nanoribbon-walls with arrayed-oxygen hinges

Y.Fujii, J.Nakamura, and A.Natori
37th Conference on the Physics and Chemistry of Surfaces and Interfaces
Tu1135-
2010/01



106 International conference proceedings, etc.
Yes
ac conductivity and dielectric constant of nanotube polymer composites

Y.Hazama, N.Ainoya, J.Nakamura, and A.Natori
37th Conference on the Physics and Chemistry of Surfaces and Interfaces
Mo1755-
2010/01



107 International conference proceedings, etc.
Yes
Structural and electronic properties of carbon nanotubes consisting of nanoribbon-walls with arrayed-oxygen hinges

J.Nakamura, Yuto Fujii, Motoi Hirayama, Shusuke Eguchi, Yuta Ogoshi, Jun Ito, and A.Natori
10th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-10)
Thu-16:30-And3-
2009/09



108 International conference proceedings, etc.
Yes
Dielectric constant profiles of the thin-films: alpha- and beta-quartz phases of (Si or Ge) dioxides

J.Nakamura, S.Wakui, M.Tamura, and A.Natori
12th International Conference on the Formation of Semiconductor Interfaces (ICFSI-12)
Tu.A.5-
2009/07



109 International conference proceedings, etc.
Yes
First-principles evaluation of the polytype-dependence of the local dielectric constant for SiC

K.Sato, Y.Iwasaki, S.Wakui, J.Nakamura, and A.Natori
5th International Symposium on Surface Science and Nanotechnology(ISSS-5)
12p-1-13
2008/11



110 International conference proceedings, etc.
Yes
Half-metallic ground states of Mn atomic wires on GaAs(110)

M.Hirayama, J.Nakamura, and A.Natori
5th International Symposium on Surface Science and Nanotechnology(ISSS-5)
12a-h-7
2008/11



111 International conference proceedings, etc.
Yes
Conductivity and dielectric constant of anisotropic CNT/polymer composites

Y.Hazama, J.Nakamura, and A.Natori
5th International Symposium on Surface Science and Nanotechnology(ISSS-5)
11p-p-71
2008/11



112 International conference proceedings, etc.
Yes
Dielectric properties of the ultra-thin La2O3(0001) film

R.Yanai, J.Nakamura, and A.Natori
5th International Symposium on Surface Science and Nanotechnology(ISSS-5)
11p-p-5
2008/11



113 International conference proceedings, etc.
Yes
Structural stability and cohesive properties of the oxygen-adsorbed graphene

S.Eguchi, J.Nakamura, and A.Natori
5th International Symposium on Surface Science and Nanotechnology(ISSS-5)
10p-p-116
2008/11



114 International conference proceedings, etc.
Yes
Dielectric discontinuity at surfaces and interfaces: a first-principles approach

J.Nakamura, K-H.Sato, Y.Iwasaki, S.Wakui, and A.Natori
International Conference on Nanoscience + Technology (ICN+T2008)
NM2-TuM13
2008/07



115 International conference proceedings, etc.
Yes
Charge correlation and spin coupling in double quantum dots

Hyuga Masu, Jun Nakamura, and Akiko Natori
Proc. of the 28th International Conference on the Physics of Semiconductors, J.Menendez and C.G. van de Walle (Eds.) (AIP Proceedings)
893, 775 - 776
2007/05



116 International conference proceedings, etc.
Yes
Dielectric discontinuity at a twin boundary in Si(111)

Jun Nakamura and Akiko Natori
Proc. of the 28th International Conference on the Physics of Semiconductors, J.Menendez and C.G. van de Walle (Eds.) (AIP Proceedings)
893, 5 - 6
2007/05



117 International conference proceedings, etc.
Yes
First-principles evaluations of dielectric properties from nano-scale points of view

Jun Nakamura, Sadakazu Wakui, Akiko Natori
Proc. of 8th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT-8)
1407-1410
2006/10



118 International conference proceedings, etc.
Yes
Spatial variation in dielectric constant at surfaces of hydrogen-terminated ultra-thin Si(111) films

J.Nakamura and A.Natori
The 8th International Conference on the Structure of Surfaces (ICSOS-8)
Th.P35-
2005/07



119 International conference proceedings, etc.
No
Electronic and magnetic properties of BNC ribbons

T.Nitta, J.Nakamura, and A.Natori
The 8th International Conference on the Structure of Surfaces (ICSOS-8)
Th.P36-
2005/07



120 International conference proceedings, etc.
Yes
Two types of surface atomic structures for As-rich GaAs(001)-c(4x4)

A.Ohtake, P.Kocan, J.Nakamura, A.Natori, and N.Koguchi
The 8th International Conference on the Structure of Surfaces (ICSOS-8)
Mo.P49-
2005/07



121 International conference proceedings, etc.
Yes
Friction in atomic scale

S.Wakunami, J.Nakamura, and A.Natori
13th International Conference on Scanning Tunneling Microscopy/Spectroscopy and Related Techniques (STM05)

2005/07



122 International conference proceedings, etc.
Yes
Dielectric properties of ultra-thin films

J.Nakamura, S.Ishihara, H.Ozawa, and A.Natori
Proc. of the 27th International Conference on the Physics of Semiconductors, J.Menendez and C.G. van de Walle (Eds.) (AIP Proceedings)
951-952
2005/06



123 International conference proceedings, etc.
Yes
Energy barrier for dimer flipping at the Si(001)-2x1 surface in external electrostatic fields

J.Nakamura and A.Natori
Proc. of the 27th International Conference on the Physics of Semiconductors, J.Menendez and C.G. van de Walle (Eds.) (AIP Proceedings)
371-372
2005/06



124 International conference proceedings, etc.
Yes
Dielectric properties of ultra-thin SiC films

J.Nakamura, H.Ozawa, and A.Natori
32nd Conference on the Physics and Chemistry of Semiconductor Interfaces

2005/01



125 International conference proceedings, etc.
No
In-situ observation of Au deposition processes on the InSb{111}A,B-(2x2) surfaces by HR-profile TEM

S.P.Cho, J.Nakamura, N.Tanaka, and T.Osaka
Proc. of International Symposium on the Creation of Novel Nanomaterials (ISCNN'04)
78-79
2004/01



126 International conference proceedings, etc.
No
Structural stability of the Ge/Si(113)-2x2 surface

Jun Nakamura, Akiko Natori, Zhao-Hui Zhang, Koji Sumitomo, Hiroo Omi, and Toshio Ogino
Proc. of the Sixth Symposium on Atomic-scale Surface and Interface Dynamics
14, 51-54
2002/03



127 International conference proceedings, etc.
Yes
Structural ordering on Si(111)Sqrt3xSqrt3-Ag surface: Monte Carlo simulation based on first-principles calculations

Yoshimichi Nakamura, Yuki Kondo, Jun Nakamura, and Satoshi Watanabe
Proc of the 25th International Conference on the Physics of Semiconductors, N. Miura and T. Ando (Eds.)(Springer-Verlag, Berlin Heidelberg, 2001)
**-
2001



128 International conference proceedings, etc.
Yes
Structural ordering on Si(111)Sqrt3xSqrt3-Ag surface: Monte Carlo simulation based on first-principles calculations

Yoshimichi Nakamura, Yuki Kondo, Jun Nakamura, and Satoshi Watanabe


2001



129 General remarks
Yes
Anomalous enhancement of Seebeck coefficients of the graphene/hexagonal boron nitride composites
Joint
Jun Nakamura and Akira Akaishi
Jpn. J. Appl. Phys.
55, 1102A9 (1-9)-
2016/10/12

10.7567/JJAP.55.1102A9

130 General remarks
No
応用物理分野のアカデミック・ロードマップ「人材育成」

山田明、中村淳、他
応用物理
79/ 8, 744-746
2010/08



131 Tutorial
Yes
オゾンの効率的な生成を促す局所原子配列
Only
中村淳
表面と真空
64/ 10, 482-482
2021/10/10



132 Tutorial
Yes
典型的な二元系化合物半導体の新しい超薄膜構造
Only
中村淳
表面と真空
62/ 11, 686-686
2019/11/10



133 Tutorial
Yes
Plasma in Solution and Its Applications
Joint
N.Saito, J.Nakamura, T.Shirafuji, and T.Ishizaki
Jpn.J.Appl.Phys.
57/ 1, 010201-010201
2017/10

10.7567/JJAP.57.010201

134 Tutorial
Yes
二次元原子層シートの磁性
Only
中村淳
表面科学
38/ 10, 534-534
2017/10/10



135 Tutorial
Yes
グラファイト/グラフェン表面上の水の濡れ性
Only
中村淳
表面科学
37/ 4, 193-193
2016/04/10



136 Tutorial
Yes
ソリューションプラズマによる新規物質合成
Only
中村淳
表面科学
35, 464-464
2014/08/10



137 Tutorial
No
カーボン系物質の熱伝導特性

中村淳
表面科学
33, 702-
2012/12



138 Tutorial
No
酸化グラフェンの応用
Joint
中村淳
表面科学
32, 112-
2011/02



139 Tutorial
Yes
GaAs(110)表面上のGa置換Mn原子鎖のスピン状態と電子状態

平山基、中村淳、名取晃子
表面科学
30/ 9, 532-537
2009/09



140 Tutorial
Yes
酸化プロセスによるグラフェンナノリボンの作製

中村淳
表面科学
30, 357-
2009/06



141 Commentary
No
Plasma in Solution and Its Applications
Joint
N.Saito, J.Nakamura, T.Shirafuji, and T.Ishizaki
Jpn.J.Appl.Phys.
57/ 1, 010201-
2017/11/01

10.7567/JJAP.57.010201

142 Commentary
No
応用物理学会人材育成・男女共同参画委員会における若手問題への取り組み

中村淳
放射線
37, 22-
2011/02